The present invention is to provide a capacitor and a method of manufacturing a semiconductor device that can also ensure leakage current characteristics while maintaining the charge capacity required by the next generation of DRAM products having a 70nm-class than the metal wiring, the dielectric film of the capacitor of the present invention It is Al2O3 / ZrO2, ZrO2 / Al2O3, (ZrO2 / Al2O3) n (2≤n≤10), (Al2O3 / ZrO2) n (2≤n≤10), ZrO2 / Al2O3 / triple layer structure of ZrO2, ZrO2 nitride single layer, double layer of nitride, Al2O3 thin film and nitrided ZrO2 thin film, the applied double membrane of the ZrO2 thin nitride and Al2O3 thin film, ZrO2 film, film triplet of the Al2O3 thin film and nitrided ZrO2 thin film, and thus the invention of the thin film capacitor as a dielectric film, a band gap energy: by (band gap energy Eg) value ZrO2 (Eg = 7.8eV, ε = 20~25) thin film and the heat stability is excellent Al2O3 (Eg = 8.7eV, ε = 9) having a thin film by constructing the multi-dielectric structure made, it can enhance the restraining force, as well as leakage current and to improve the breakdown voltage value, and also, the bar can be obtained the charge capacity of the large capacity, as required in high-density memory products than class 70㎚ while having a sufficient charge capacity can implement a capacitor with a leakage current and breakdown voltage characteristic. A capacitor, a zirconium oxide film, ALD, multi-dielectric