基本信息:
- 专利标题： 반도체 기억장치 및 데이터 기록방법
- 专利标题（英）：Semiconductor memory device and method for writing data
- 专利标题（中）：半导体存储器件和数据写入方法
- 申请号：KR1020030038529 申请日：2003-06-14
- 公开(公告)号：KR100556199B1 公开(公告)日：2006-03-03
- 发明人： 스미타니켄
- 申请人： 샤프 가부시키가이샤
- 申请人地址： * Takumi-cho, Sakai-ku, Sakai City, Osaka, Japan
- 专利权人： 샤프 가부시키가이샤
- 当前专利权人： 샤프 가부시키가이샤
- 当前专利权人地址： * Takumi-cho, Sakai-ku, Sakai City, Osaka, Japan
- 代理人： 하영욱; 하상구
- 优先权： JPJP-P-2002-00175044 2002-06-14
- 主分类号： G11C16/00
- IPC分类号： G11C16/00
A semiconductor memory device comprising a memory array having a plurality of memory cells capable of storing more than one bit of data, the data recording control section for controlling a data write operation to the plurality of memory cells; Address signal generation section for generating an address signal for specifying an address of a prescribed memory cell; Determination unit for determining whether or not to write data to the prescribed memory cell and outputting a first write signal; Data register section for storing data that is specified by the first write signal and outputting a second write signal; And wherein on the basis of the second recording signal comprises a data recording unit for recording data in the predetermined memory cell. Wherein the data register section stores the data on the basis of the control signal output by the data write control section.
公开/授权文献:
- KR1020030096093A 반도체 기억장치 및 데이터 기록방법 公开/授权日：2003-12-24