基本信息:
- 专利标题： 반도체 장치 및 그 제조 방법
- 专利标题（英）：Semiconductor device and manufacturing method thereof
- 申请号：KR1020020083214 申请日：2002-12-24
- 公开(公告)号：KR100517587B1 公开(公告)日：2005-09-29
- 发明人： 야마구찌신지 , 아사즈다꾸로 , 오노아쯔시
- 申请人： 샤프 가부시키가이샤
- 申请人地址： * Takumi-cho, Sakai-ku, Sakai City, Osaka, Japan
- 专利权人： 샤프 가부시키가이샤
- 当前专利权人： 샤프 가부시키가이샤
- 当前专利权人地址： * Takumi-cho, Sakai-ku, Sakai City, Osaka, Japan
- 代理人： 주성민; 구영창
- 优先权： JPJP-P-2001-00392543 2001-12-25
- 主分类号： H01L21/60
- IPC分类号： H01L21/60
The semiconductor device of the present invention is connected to the electrode pad in the first protective film is formed on a substrate, having an opening on the electrode pad, the openings, and the projection electrode is formed to the peripheral portion is covered with a portion of the first protective film and at least a first protective film and is formed so as to cover the gap between the boundary portion between the protruding electrodes, and the upper surface area of the protrusion electrode of claim and the first protective film and second protective film, which is the opening except for the peripheral boundary of the second protection film in the opening, and it has a coating layer which is formed so as to cover the surface of the projection electrode. Thereby, the electroless plating in a semiconductor device for forming a projection electrode by a plating method, it is possible to prevent the lowering of adhesion strength between the electrode pad and the protruding electrode.
公开/授权文献:
- KR1020030057346A 반도체 장치 및 그 제조 방법 公开/授权日：2003-07-04
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/50 | ...应用H01L21/06至H01L21/326中的任一小组都不包含的方法或设备组装半导体器件的 |
| --------------H01L21/60 | ....引线或其他导电构件的连接，用于工作时向或由器件传导电流 |