基本信息:
- 专利标题： 액정 표시 장치 및 그 제조 방법
- 专利标题（英）：Liquid crystal display device and method for manufacturing the same
- 专利标题（中）：액정표시장치및그제조방법
- 申请号：KR1019990046522 申请日：1999-10-26
- 公开(公告)号：KR100371290B1 公开(公告)日：2003-02-07
- 发明人： 아까마쯔게이이찌 , 시마다요시노리
- 申请人： 샤프 가부시키가이샤
- 申请人地址： * Takumi-cho, Sakai-ku, Sakai City, Osaka, Japan
- 专利权人： 샤프 가부시키가이샤
- 当前专利权人： 샤프 가부시키가이샤
- 当前专利权人地址： * Takumi-cho, Sakai-ku, Sakai City, Osaka, Japan
- 代理人： 장수길; 구영창
- 优先权： JP1998-304452 1998-10-26; JP1999-224483 1999-08-06
- 主分类号： G02F1/136
- IPC分类号： G02F1/136
摘要：
There is provided a liquid crystal display device which utilizes low resistance metal wiring and in which pixel electrodes and drain electrodes can be reliably connected and a method for manufacturing the same. Gate electrodes connected to gate signal lines are formed on a transparent insulating substrate, and a gate insulation film is formed to cover the same. A semiconductor layer, source electrodes and drain electrodes are formed over the gate electrodes, and a metal layer to become source signal lines and source and drain extraction electrodes is formed. The metal layer is formed by stacking a titanium film and an aluminum film. The interlayer insulation film is formed to cover TFTs, gate signal lines and source signal lines. Through holes are formed in the interlayer insulation film to expose at least a part of the periphery of the drain extraction electrodes. Pixel electrodes are formed to cover the through holes.
摘要（中）：
提供了一种利用低电阻金属布线并且其中可以可靠连接像素电极和漏电极的液晶显示装置及其制造方法。 连接到栅极信号线的栅极电极形成在透明绝缘基板上，并且形成栅极绝缘膜以覆盖栅极绝缘膜。 在栅电极上形成半导体层，源电极和漏电极，并形成成为源信号线和源漏引出电极的金属层。 金属层通过堆叠钛膜和铝膜形成。 层间绝缘膜形成为覆盖TFT，栅极信号线和源极信号线。 在层间绝缘膜中形成通孔以暴露漏极引出电极的至少一部分外围。 像素电极形成为覆盖通孔。
公开/授权文献:
- KR1020000029304A 액정 표시 장치 및 그 제조 방법 公开/授权日：2000-05-25