基本信息:
- 专利标题： 반도체 장치의 제조 방법 및 제조 장치
- 专利标题（英）：A method and an apparatus for fabricating a semiconductor device
- 专利标题（中）：一种用于制造半导体器件的方法和装置
- 申请号：KR1019950007042 申请日：1995-03-28
- 公开(公告)号：KR100203823B1 公开(公告)日：1999-06-15
- 发明人： 후나이다까시 , 마끼따나오끼 , 다까야마도루
- 申请人： 샤프 가부시키가이샤 , 가부시키가이샤 한도오따이 에네루기 켄큐쇼
- 申请人地址： * Takumi-cho, Sakai-ku, Sakai City, Osaka, Japan
- 专利权人： 샤프 가부시키가이샤,가부시키가이샤 한도오따이 에네루기 켄큐쇼
- 当前专利权人： 샤프 가부시키가이샤,가부시키가이샤 한도오따이 에네루기 켄큐쇼
- 当前专利权人地址： * Takumi-cho, Sakai-ku, Sakai City, Osaka, Japan
- 代理人： 백덕열; 이태희
- 优先权： JP94-57727 1994-03-28
- 主分类号： H01L29/772
- IPC分类号： H01L29/772
From the substrate on which the amorphous semiconductor film is deposited on an insulating surface, and partially heated by the heating element that the heating beam to the amorphous semiconductor film, a predetermined area by moving either the heating element or the substrate is moved to the heating zone. Thereby crystallizing the amorphous semiconductor film and heat treatment sequentially. The crystal grains of the semiconductor portion of a polycrystallized by irradiation of heat rays that exist adjacent, with the movement of the heating zone as the seed crystal, and proceeds sequentially polycrystalline upset. Thus the growth state of the crystal grains are uniformly controlled in accordance with the moving direction of the heating zone.
公开/授权文献:
- KR1019950034831A 반도체 장치의 제조 방법 및 제조 장치 公开/授权日：1995-12-28
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L29/00 | 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件 |
| --------H01L29/02 | .按其半导体本体的特征区分的 |
| ----------H01L29/68 | ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的 |
| ------------H01L29/70 | ...双极器件 |
| --------------H01L29/772 | ....场效应晶体管 |