基本信息:
- 专利标题： 반도체장치의 제조방법
- 专利标题（英）：Method for manufacturing semiconductor device
- 申请号：KR1019980023315 申请日：1998-06-22
- 公开(公告)号：KR100167438B1 公开(公告)日：1999-05-01
- 发明人： 무라카미겐 , 츠보사키구니히로 , 이치타니마사히로 , 니시구니히코 , 안죠이치로 , 니시무라아사오 , 기타노마코토 , 야구치아키히로 , 가와이스에오 , 오가타마사츠구 , 에구치슈지 , 고카쿠히로요시 , 세가와마사노리 , 호조지히로시 , 요코야마다카시 , 긴죠노리유키 , 가네다아이조 , 사에키쥰이치 , 나카무라쇼조 , 하세베아키오 , 기쿠치히로시 , 요시다이사무 , 야마자키다카시 , 오시마가즈요시 , 마츠모토데츠로
- 申请人： 가부시끼가이샤 히다치 세이사꾸쇼
- 申请人地址： *-*, Marunouchi *-chome, Chiyoda-ku, Tokyo, Japan
- 专利权人： 가부시끼가이샤 히다치 세이사꾸쇼
- 当前专利权人： 가부시끼가이샤 히다치 세이사꾸쇼
- 当前专利权人地址： *-*, Marunouchi *-chome, Chiyoda-ku, Tokyo, Japan
- 代理人： 백남기
- 优先权： JP88-236156 1988-09-20; JP89-65844 1989-03-20
- 主分类号： H01L23/50
- IPC分类号： H01L23/50
이와 같이 하는 것에 의해, 반도체장치의 신뢰성을 향상시킬 수 있고, 반도체장치에서 반도체칩과 리이드 사이의 부유용량에 의한 신호전송속도의 향상 및 전기잡음의 저감을 도모할 수 있다는 효과가 얻어진다.
Relates to a method for manufacturing a semiconductor device, provides a technique which can improve reliability of the semiconductor device, it can be reduced for improvement and electrical noise in the signal transmission speed due to the stray capacitance between the semiconductor chip and the leads in a semiconductor device to provide that technology, the semiconductor chip, a number of leads, a number of bonding wires and the number of a method for manufacturing a semiconductor device having a jibong member, a step of bonding a portion of the inner lead to the main surface of the semiconductor chip, inner leads and a number of an external terminal and a step of sealing by a process and a semiconductor chip, the inside of the multiple lead the lead and the resin several bonding wire electrically connected by a number of bonding wires and resin containing silica of a rectangle as an additive and the resin composition can jibong member is formed by a transfer molding method using the resin composition. By this way, it is possible to improve the reliability of the semiconductor device, the semiconductor device is an effect that can be reduced and improvement of electrical noise in the signal transmission speed due to the stray capacitance between the semiconductor chip and the lead can be obtained.
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L23/00 | 半导体或其他固态器件的零部件 |
| --------H01L23/34 | .冷却装置；加热装置；通风装置或温度补偿装置 |
| ----------H01L23/50 | ..用于集成电路器件的 |