基本信息:
- 专利标题： 자기저항물질
- 专利标题（英）：Magnetoresistance material
- 专利标题（中）：磁阻材料
- 申请号：KR1019950018629 申请日：1995-06-30
- 公开(公告)号：KR100165994B1 公开(公告)日：1999-01-15
- 发明人： 하야시가즈히꼬 , 야마모또히데후미 , 후지가따주니찌 , 이시하라구니히꼬
- 申请人： 닛본 덴끼 가부시끼가이샤
- 申请人地址： 일본국 도꾜도 미나도꾸 시바 *쪼메 *방 *고
- 专利权人： 닛본 덴끼 가부시끼가이샤
- 当前专利权人： 닛본 덴끼 가부시끼가이샤
- 当前专利权人地址： 일본국 도꾜도 미나도꾸 시바 *쪼메 *방 *고
- 代理人： 구영창; 장수길
- 优先权： JP94-150858 1994-07-01
- 主分类号： H01F1/00
- IPC分类号： H01F1/00
The present invention relates to a resist material, i.e. a non-magnetic matrix and a non-magnetic matrix dispersed in a Co or Ni-Fe-Co and the non-homogeneous sealed consisting of ultrafine particles of a ferromagnetic material, such as, a conductive material showing a magneto-resistive. The alloy or mixture of metals of two or more elements selected from the group consisting of Cu, Ag, Au and Pt is used as the non-magnetic matrix material in order to reduce the deterioration of the magneto-resistance effect. If desired, the non-magnetic matrix may contain a limited amount of supplemental element selected from the group consisting of Al, Cr, In, Mn, Mo, Nb, Pd, Ta, W, V, Zr and Ir. Can be formed on the magnetoresistive film substrate, it is also possible to insert a buffer layer between the film and the substrate and to cover (or) film as a protective layer.
公开/授权文献:
- KR1019960005635A 자기저항물질 公开/授权日：1996-02-23
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01F | 磁体；电感；变压器；磁性材料的选择 |
| ------H01F1/00 | 按所用磁性材料区分的磁体或磁性物体；磁性材料的选择 |