基本信息:
- 专利标题: 원형그레이팅표면방출형레이저다이오드및그어레이
- 专利标题(英):Circle grating surface emitting laser diode
- 专利标题(中):圆形表面发射激光二极管
- 申请号:KR1019940001404 申请日:1994-01-27
- 公开(公告)号:KR100132018B1 公开(公告)日:1998-04-14
- 发明人: 권오대
- 申请人: 학교법인 포항공과대학교
- 申请人地址: 경북 포항시 남구 효자동 산**번지
- 专利权人: 학교법인 포항공과대학교
- 当前专利权人: 학교법인 포항공과대학교
- 当前专利权人地址: 경북 포항시 남구 효자동 산**번지
- 代理人: 김원준; 장성구
- 主分类号: H01S5/18
- IPC分类号: H01S5/18
摘要:
Put a base material into a vaporizer such as MOCVD or MBE, etc. Vaporize a n+ buffer layer, and an n reflection layer(14) consisting of multiple AIA-AIGaAs pairs on it. Considering periodical change of refraction rate, reflect the light in more than 90% of the reflection rate, making sure a laser should emit toward the surface of a semiconductor, not to an n+ base material(10). And ensure that the band gap energy of a activated layer(20) is smaller than the upper and lower parts of a grating layer(22,18) and the electric charge implanted from the contact area(30,32) is effectively constrained to the activated layer(20), after forming an n cladding(16) and a p cladding(24) layer into Gal-XAS, implant actively into the activated layer(20) in order to form the p+ layer(26). Then form the circular grating layer(28) onto the p+ layer(26), p contact area(30) onto the upper part of the p+ layer(26), outside of the circular grating layer(28), and n contact layer on the n+ base material.
摘要(中):
将基材放入诸如MOCVD或MBE等蒸发器中。蒸发n +缓冲层和由其上的多个AIA-AIGAAs对组成的n反射层(14)。 考虑周期性的折射率变化,将光反射到反射率的90%以上,确保激光朝向半导体的表面而不是n +基材(10)发射。 并且确保激活层(20)的带隙能量小于光栅层(22,18)的上部和下部,并且从接触区域(30,32)注入的电荷被有效地约束到 活化层(20),在将n个包层(16)和ap包层(24)层形成到Gal-XAS之后,主动地注入活化层(20)中以形成p +层(26)。 然后将圆形光栅层(28)形成到p +层(26)上,p接触区域(30)到p +层(26)的上部,在圆形光栅层(28)的外部,并且n接触层 n +基材。
公开/授权文献:
- KR1019950024381A 원형그레이팅표면방출형레이저다이오드및그어레이 公开/授权日:1995-08-21