基本信息:
- 专利标题： リソグラフィー用下層膜形成材料、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜及びその製造方法、並びにレジストパターン形成方法
- 专利标题（英）：JPWO2017038643A1 - Underlayer film forming material for lithography, underlayer film forming composition for lithography, the lower film and a manufacturing method thereof for lithography and a resist pattern forming method
- 申请号：JP2016074865 申请日：2016-08-25
- 公开(公告)号：JPWO2017038643A1 公开(公告)日：2018-06-14
- 发明人： 樋田 匠 , 牧野嶋 高史 , 佐藤 隆 , 越後 雅敏
- 申请人： 三菱瓦斯化学株式会社
- 申请人地址： 東京都千代田区丸の内2丁目5番2号
- 专利权人： 三菱瓦斯化学株式会社
- 当前专利权人： 三菱瓦斯化学株式会社
- 当前专利权人地址： 東京都千代田区丸の内2丁目5番2号
- 代理人： 稲葉 良幸; 大貫 敏史; 内藤 和彦
- 优先权： JP2015170190 2015-08-31
- 主分类号： G03F7/004
- IPC分类号： G03F7/004 ; G03F7/20 ; C08G8/20 ; G03F7/11
The present invention provides a contains at least one, the lower layer material for lithography, a resin containing a compound or a structural unit derived from a compound represented by the following formula (1) represented by the following formula (1) to. ## STR1 (1) (Formula (1), R1 is a 2n-valent group or a single bond having 1 to 60 carbon atoms, R2 are each independently a halogen atom, a straight having 1 to 10 carbon atoms chain, branched or cyclic alkyl group, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group or a hydroxyl group, the same naphthalene ring or or different and be identical in benzene ring, n is an integer from 1 to 4, when n is 2 or greater, the structural formula of the structural units of n in [] may be the same may also be different, X is an oxygen atom, that is a sulfur atom or an uncrosslinked, m2 are each independently integers from 0 to 7, wherein at least one of m2 is 1-7 integer in it, q are each independently 0 or 1, provided that the R1 and R2 At least one selected from the group consisting of is a group containing an iodine atom.)
公开/授权文献:
- JP2017186028A ラベル被嵌方法およびラベル被嵌装置 公开/授权日：2017-10-12