基本信息:
- 专利标题: 弾性波装置
- 专利标题(英):Acoustic wave device
- 专利标题(中):声表面波器件
- 申请号:JP2015519875 申请日:2014-05-27
- 公开(公告)号:JPWO2014192756A1 公开(公告)日:2017-02-23
- 发明人: 昌和 三村 , 大輔 玉崎 , 克也 大門 , 正人 荒木
- 申请人: 株式会社村田製作所
- 申请人地址: 京都府長岡京市東神足1丁目10番1号
- 专利权人: 株式会社村田製作所
- 当前专利权人: 株式会社村田製作所
- 当前专利权人地址: 京都府長岡京市東神足1丁目10番1号
- 代理人: 特許業務法人 宮▲崎▼・目次特許事務所
- 优先权: JP2013112839 2013-05-29
- 主分类号: H03H9/145
- IPC分类号: H03H9/145
Without increasing the complexity and cost of the manufacturing process, can suppress transverse-mode ripples effectively provides an acoustic wave device.
The IDT electrode 3 is disposed on the piezoelectric substrate 2, the IDT electrode 3, in at least one of the first, second electrode fingers 13 and 14, the width direction dimension as compared to the central longitudinal is largely the wide portions 13a to 13d, 14a through 14d are provided on at least one side of the proximal and distal than the central region, at least one of the first and second bus bars 11 and 12, bus bars having a plurality of openings 15 which are distributed along the length, at least one of the first and second bus bars 11 and 12, the first or second electrode fingers 13 and 14 than the opening 15 located on the side, has an inner bus bar portion 11A extending in the length direction of the first and second bus bars 11 and 12, a central bus bar portion 11B in which the opening 15 is provided, the outer bus bar portion 11C, acoustic wave device 1.
公开/授权文献:
- JP6179594B2 弾性波装置 公开/授权日:2017-08-16
信息查询:
EspacenetIPC结构图谱:
H | 电学 |
--H03 | 基本电子电路 |
----H03H | 阻抗网络,例如谐振电路;谐振器 |
------H03H9/00 | 包括机电或电声元件的网络,如谐振电路 |
--------H03H9/02 | .零部件 |
----------H03H9/05 | ..支座;支承物 |
------------H03H9/145 | ...用于应用声表面波的网络 |