The film forming apparatus (1), the object to be processed as the target (3) is opposed with the workpiece having a film-forming surface (W) and the sputtering surface (3a) (W) and the target (3 ) and chamber (2) having an inner space that both are arranged in an exhaust unit for depressurizing the chamber (2), first generating a magnetic field in the internal space of the sputtering surface (3a) is exposed magnetic field generating section (4), a DC power source (9) for applying a negative DC voltage the targeted (3), gas inlet for introducing a sputtering gas into the chamber (2) in (11), said sputtering entirely and the second magnetic field generating unit for generating a vertical magnetic field to pass the vertical magnetic field lines between the entire surface of the deposition surface of the workpiece (W) surface (3a) and (13), the second upstream of the target as viewed from the magnetic field generating unit (13) Including third magnetic field generating unit which is arranged and (18).