基本信息:
- 专利标题: Semiconductor integrated circuit
- 专利标题(中):半导体集成电路
- 申请号:JP15397284 申请日:1984-07-26
- 公开(公告)号:JPS6134980A 公开(公告)日:1986-02-19
- 发明人: NISHIZAWA JUNICHI , MOTOTANI KAORU
- 申请人: Kaoru Mototani , Junichi Nishizawa , Res Dev Corp Of Japan
- 专利权人: Kaoru Mototani,Junichi Nishizawa,Res Dev Corp Of Japan
- 当前专利权人: Kaoru Mototani,Junichi Nishizawa,Res Dev Corp Of Japan
- 优先权: JP15397284 1984-07-26
- 主分类号: H01L29/80
- IPC分类号: H01L29/80 ; H01L21/8222 ; H01L27/06 ; H01L27/08 ; H01L27/082 ; H01L29/10 ; H01L29/205 ; H01L29/43 ; H01L29/772
摘要:
PURPOSE:To obtain a rapid and low-power semiconductor integrated circuit which can be highly integrated, by providing an integrated circuit whose load resistance is connected in series with a thermionic emitting SIT. CONSTITUTION:A thermionic emitting SIT30 having normally-OFF properties has a load resistance 31, an input terminal 20, a grounding terminal 21, an output terminal 22 and a power input 23. When the input is zero and when the thermionic emitting SIT30 is OFF, the level becomes high in the output terminal 22. When the input becomes high, the SIT30 is turned ON and the level becomes low in the output terminal 22. Thus, the SIT30 performs so-called invertor operation. The current flowing through the circuit depends on the value of the load resistance 31. For example, when VDD is 1V and the load resistance is 1kOMEGA, the current is on the order of 1mA. Accordingly, the ON voltage of the thermionic emitting SIT30 becomes very low.
摘要(中):
目的:通过提供负载电阻与热电子发射SIT串联连接的集成电路,获得可以高度集成的快速和低功耗半导体集成电路。 构成:具有常关特性的热离子发射SIT30具有负载电阻31,输入端子20,接地端子21,输出端子22和电源输入23.当输入为零并且当热离子发射SIT30为OFF时 ,输出端子22的电平变高。当输入变为高电平时,SIT30导通,输出端子22的电平变低。因此,SIT30执行所谓的反相器操作。 流过电路的电流取决于负载电阻31的值。例如,当VDD为1V,负载电阻为1kOMEGA时,电流约为1mA。 因此,热离子发射SIT30的导通电压变得非常低。
公开/授权文献:
- JPH0614534B2 公开/授权日:1994-02-23
信息查询:
EspacenetIPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L29/00 | 专门适用于整流、放大、振荡或切换,并具有至少一个电位跃变势垒或表面势垒的半导体器件;具有至少一个电位跃变势垒或表面势垒,例如PN结耗尽层或载流子集结层的电容器或电阻器;半导体本体或其电极的零部件 |
--------H01L29/02 | .按其半导体本体的特征区分的 |
----------H01L29/68 | ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的 |
------------H01L29/70 | ...双极器件 |
--------------H01L29/762 | ....电荷转移器件 |
----------------H01L29/80 | .....由PN结或其他整流结栅产生场效应的 |