基本信息:
- 专利标题： Vertical magnetic recording medium
- 专利标题（中）：垂直磁记录介质
- 申请号：JP23022784 申请日：1984-11-02
- 公开(公告)号：JPS61110329A 公开(公告)日：1986-05-28
- 发明人： ASADA SEIICHI , SUZUKI HIROYUKI , NIIHARA TOSHIO , YOSHIDA KAZUYOSHI , SHIIKI KAZUO , FUTAMOTO MASAAKI , HONDA YUKIO , TSUMITA NORIKAZU
- 申请人： Hitachi Ltd , Hitachi Maxell Ltd
- 专利权人： Hitachi Ltd,Hitachi Maxell Ltd
- 当前专利权人： Hitachi Ltd,Hitachi Maxell Ltd
- 优先权： JP23022784 1984-11-02
- 主分类号： G11B5/66
- IPC分类号： G11B5/66 ; G11B5/64 ; G11B5/667 ; G11B5/73 ; G11B5/738
摘要：
PURPOSE: To improve the magnetic characteristic of a vertically magnetizable Fe
x N film by depositing at least one intermediate film layer between a high permeability magnetic film and the Fe
x N film.
CONSTITUTION: A nonmagnetic substrate 1 is housed in an RF sputtering device and the high permeability film, intermediate film and Fe
x N film are continuously sputtered by a sputter target 2. The material of which the average nearest inter-atom distance (DCA) is 2.5W3.5Å, for example, elements such as V, Ru, Zn W etc. and the metallic nitride and metallic oxide thereof are used as the material for the intermediate film. The C-axis of the Fe
x N film is oriented perpendicularly to the film plane when such intermediate film is intervened by which the upper limit value of Bs to be formed as the vertically magnetizable film is made as high as ≥7,000G and the magnetic characteristic of the Fe
x N film is improved.
COPYRIGHT: (C)1986,JPO&Japio
摘要（中）：
x N film by depositing at least one intermediate film layer between a high permeability magnetic film and the Fe
x N film.
CONSTITUTION: A nonmagnetic substrate 1 is housed in an RF sputtering device and the high permeability film, intermediate film and Fe
x N film are continuously sputtered by a sputter target 2. The material of which the average nearest inter-atom distance (DCA) is 2.5W3.5Å, for example, elements such as V, Ru, Zn W etc. and the metallic nitride and metallic oxide thereof are used as the material for the intermediate film. The C-axis of the Fe
x N film is oriented perpendicularly to the film plane when such intermediate film is intervened by which the upper limit value of Bs to be formed as the vertically magnetizable film is made as high as ≥7,000G and the magnetic characteristic of the Fe
x N film is improved.
COPYRIGHT: (C)1986,JPO&Japio
目的：通过在高磁导率磁性膜和FexN膜之间沉积至少一个中间膜层来提高可垂直磁化的FexN膜的磁特性。 构成：将非磁性基板1容纳在RF溅射装置中，并且通过溅射靶2连续地溅射高透磁性膜，中间膜和FexN膜。平均最近的原子间距离（DCA）为2.5〜 例如，使用例如V，Ru，Zn等元素及其金属氮化物和金属氧化物作为中间膜的材料。 当介入这种中间膜时，FexN膜的C轴垂直于膜平面定向，使得形成为可垂直磁化膜的Bs的上限值高达> = 7,000G，并且磁特性 的FexN膜改进。
信息查询:
EspacenetIPC结构图谱:
| G | 物理 |
| --G11 | 信息存储 |
| ----G11B | 基于记录载体和换能器之间的相对运动而实现的信息存储 |
| ------G11B5/00 | 借助于记录载体的激磁或退磁进行记录的；用磁性方法进行重现的；为此所用的记录载体 |
| --------G11B5/48 | .磁头相对于记录载体的配置或安装 |
| ----------G11B5/64 | ..仅由无须黏结剂的磁性材料构成的 |
| ------------G11B5/66 | ...由多层材料组成的记录载体 |