基本信息:
- 专利标题： Formation of film
- 专利标题（中）：形成电影
- 申请号：JP12266198 申请日：1998-03-27
- 公开(公告)号：JPH11279773A 公开(公告)日：1999-10-12
- 发明人： UENO TOMO
- 申请人： Tomoo Ueno , 智雄 上野
- 专利权人： Tomoo Ueno,智雄 上野
- 当前专利权人： Tomoo Ueno,智雄 上野
- 优先权： JP12266198 1998-03-27
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; B01J19/08 ; C23C16/24 ; C23C16/40 ; C23C16/452 ; C23C16/50 ; C23C16/511 ; C23C26/00 ; H01L21/314 ; H01L21/316 ; H01L21/318
摘要：
PROBLEM TO BE SOLVED: To attain the reduction of the temp. in a film forming process.
SOLUTION: In a film forming process in which molecules composed of plural atoms are deposited on a substrate 7 or are brought to react with substrate atoms to produce a compd., plamsa is generated in an atmosphere of a gaseous mixture of an inert gas having a level of metastable energy higher than the energy required for converting the molecules into atoms and the molecules, and the molecules are previously dissociated into atoms. As a result, the dissociation of the molecules on the substrate is made needless, and the temp. in the film forming process can be reduced.
COPYRIGHT: (C)1999,JPO
摘要（中）：
SOLUTION: In a film forming process in which molecules composed of plural atoms are deposited on a substrate 7 or are brought to react with substrate atoms to produce a compd., plamsa is generated in an atmosphere of a gaseous mixture of an inert gas having a level of metastable energy higher than the energy required for converting the molecules into atoms and the molecules, and the molecules are previously dissociated into atoms. As a result, the dissociation of the molecules on the substrate is made needless, and the temp. in the film forming process can be reduced.
COPYRIGHT: (C)1999,JPO
要解决的问题：达到降低温度 在成膜过程中。 解决方案：在其中由多个原子组成的分子沉积在基底7上或与基底原子反应以产生化合物的成膜方法中，在惰性气体的气体混合物的气氛中产生 亚稳态能量高于将分子转化为原子和分子所需的能量，并且分子预先解离成原子。 结果，使基板上的分子的解离变得不必要， 在成膜过程中可以减少。
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/26 | ....用波或粒子辐射轰击的 |
| ----------------H01L21/31 | .....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的；以及这些层的后处理；这些层的材料的选择 |