基本信息:
- 专利标题： SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- 申请号：JP30924593 申请日：1993-12-09
- 公开(公告)号：JPH07161989A 公开(公告)日：1995-06-23
- 发明人： AOKI NOBUTOSHI
- 申请人： TOSHIBA CORP
- 专利权人： TOSHIBA CORP
- 当前专利权人： TOSHIBA CORP
- 优先权： JP30924593 1993-12-09
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
PURPOSE:To manufacture a MOS suitable for miniaturization with excellent controllability by a method wherein the diffusion of impurities when a gate insulator film is formed and the evaporation of impurities from a substrate surface are reduced. CONSTITUTION:This method includes a step of forming a first insulator film 4a on the surface of a semiconductor substrate 1; a step of implanting ions into the semiconductor substrate 1 through the first insulator film 4; and a step of forming a second insulator film 4b between the first insulator film 4a and the semiconductor substrate 1. Thus, it is possible to reduce the impurity diffusion when a gate insulator film is formed or the evaporation of impurities fro the substrate, and to form a thin high concentration layer, and to manufacture a MOS suitable for miniaturization with excellent controllability.
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L29/00 | 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件 |
| --------H01L29/02 | .按其半导体本体的特征区分的 |
| ----------H01L29/68 | ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的 |
| ------------H01L29/70 | ...双极器件 |
| --------------H01L29/762 | ....电荷转移器件 |
| ----------------H01L29/78 | .....由绝缘栅产生场效应的 |