PURPOSE:To reduce the generation of precipitation of silicon inside a wiring to be connected through a silicon film in a semiconductor region and improve an electrical reliability by a method wherein a shielding film for shielding the precipitation of silicon atoms of an insulation film is provided between at least the under surface or the top surface of a wiring of Al alloy film or the like and a silicon-based insulation film. CONSTITUTION:In a semiconductor integrated circuit device where a wiring 18 with an aluminum film or its alloy film as a main body and which its surrounding is coated with silicon-based insulating film 16, 19 connected to a semiconductor region 13 formed on the main surface of a single crystal silicon substrate 1, shield film 18A, 18C for shielding the precipitation of silicon atoms inside insulation films 16, 19 is provided between at least the under surface and the top surface of the above wiring 18 and the insulating films 16, 19. For example, the above shield films 18A, 18C are formed with conductive barrier metals such as MoSi2, TiSi2TiN, WN. The shielding film 18A is also provided on the under surface of the wiring 18 of the connection section between the above silicon film 15 and the wiring 18 so that the shielding film 18A of that portion is used as a barrier metal film.