基本信息:
- 专利标题： 信号伝送絶縁デバイス及びパワー半導体モジュール
- 专利标题（英）：Signal transmission isolation device and a power semiconductor module
- 专利标题（中）：信号传输绝缘装置及功率半导体模块
- 申请号：JP2015558276 申请日：2015-08-19
- 公开(公告)号：JP5889501B1 公开(公告)日：2016-03-22
- 发明人： 菅 健一 , 釣本 崇夫 , 塩田 裕基 , 諸熊 健一 , 折田 昭一 , 為谷 典孝 , 井上 貴公 , 魚田 紫織
- 申请人： 三菱電機株式会社
- 申请人地址： 東京都千代田区丸の内二丁目7番3号
- 专利权人： 三菱電機株式会社
- 当前专利权人： 三菱電機株式会社
- 当前专利权人地址： 東京都千代田区丸の内二丁目7番3号
- 代理人： 大岩 増雄; 竹中 岑生; 村上 啓吾; 吉澤 憲治
- 优先权： JP2014233376 2014-11-18
- 国际申请： JP2015073229 JP 2015-08-19
- 主分类号： H01L27/04
- IPC分类号： H01L27/04 ; H01L21/822
Signal transmission isolation device consists of a first dielectric while the first coil, a second coil which constitutes a first coil and a transformer to face the first coil, the first coil and the second coil are opposed a first insulating film, a second insulating film made of a low resistivity than the first dielectric surrounding the first coil second dielectric, low resistivity than the first dielectric surrounds the second coil first 3 that a third insulating film formed of a dielectric, or a first coil, a second coil which constitutes a first coil and a transformer to face the first coil, and a first coil and a second coil enclosing a first insulating film made of the first dielectric between the opposing a second insulating film made of a second dielectric with a high dielectric constant than the first dielectric surrounding the first coil, a second coil than the first dielectric and that a third insulating film made of a third dielectric with a high dielectric constant.
公开/授权文献:
- JPWO2016080034A1 信号伝送絶縁デバイス及びパワー半導体モジュール 公开/授权日：2017-04-27