发明专利
JP5553478B2 Nanowire channel and nanoparticles - the non-volatile memory electronic devices equipped with the floating gate node and a method of manufacturing the same
有权
基本信息:
- 专利标题: Nanowire channel and nanoparticles - the non-volatile memory electronic devices equipped with the floating gate node and a method of manufacturing the same
- 申请号:JP2008032320 申请日:2008-02-13
- 公开(公告)号:JP5553478B2 公开(公告)日:2014-07-16
- 发明人: サンシグ キム , チャンジュン ユン , ドンヨン ジョン , ドンヒョク ヨム
- 申请人: インテレクチュアル ディスカバリー シーオー エルティディ
- 专利权人: インテレクチュアル ディスカバリー シーオー エルティディ
- 当前专利权人: インテレクチュアル ディスカバリー シーオー エルティディ
- 优先权: KR20070018271 2007-02-23; KR20070018259 2007-02-23
- 主分类号: H01L21/336
- IPC分类号: H01L21/336 ; H01L21/8247 ; H01L27/115 ; H01L29/786 ; H01L29/788 ; H01L29/792 ; H01L51/05 ; H01L51/30
摘要:
A nonvolatile memory electronic device including nanowire channel and nanoparticle-floating gate nodes, in which the nonvolatile memory electronic device, which comprises a semiconductor nanowire used as a charge transport channel and nanoparticles used as a charge trapping layer, is configured by allowing the nanoparticles to be adsorbed on a tunneling layer deposited on a surface of the semiconductor nanowire, whereby charge carriers moving through the nanowire are tunneled to the nanoparticles by a voltage applied to a gate, and then, the charge carriers are tunneled from the nanoparticles to the nanowire by the change of the voltage that has been applied to the gate, whereby the nonvolatile memory electronic device can be operated at a low voltage and increase the operation speed thereof.
公开/授权文献:
信息查询:
EspacenetIPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |
----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体,如掺杂材料 |
--------------H01L21/26 | ....用波或粒子辐射轰击的 |
----------------H01L21/335 | .....场效应晶体管 |
------------------H01L21/336 | ......带有绝缘栅的 |