发明专利
JP5368663B2 A method of producing it and the sputter target in order to reduce the particulate emissions at the time of sputtering
有权
基本信息:
- 专利标题： A method of producing it and the sputter target in order to reduce the particulate emissions at the time of sputtering
- 申请号：JP2001576952 申请日：2001-04-09
- 公开(公告)号：JP5368663B2 公开(公告)日：2013-12-18
- 发明人： ウィッカーシャム，チャールズ，イー．，ジュニア , プール，ジョン，イー． , レイボヴィッチ，アレクサンダー , ツー，リン
- 申请人： トーソー エスエムディー,インク.
- 专利权人： トーソー エスエムディー,インク.
- 当前专利权人： トーソー エスエムディー，インク．
- 优先权： US19779000 2000-04-14; US21503700 2000-06-29; US24997800 2000-11-20
- 主分类号： B22D11/00
- IPC分类号： B22D11/00 ; C22B21/06 ; B22D11/049 ; B22D11/115 ; B22D11/119 ; B22D21/04 ; B22D27/02 ; B22D43/00 ; C22B9/02 ; C22C21/02 ; C22C21/12 ; C23C14/34
摘要：
Methods for reducing inclusion content of sputter targets and targets so produced are disclosed. Inclusions (93) may be reduced by adding a small amount of Si to the molten A1 or molten A1 alloy followed by filtering of the molten metals through a filter medium (175). Targets having substantially no inclusions (93) therein of greater than about 400 mu m are especially useful in the sputtering of large flat panel displays and result, upon sputtering, in a reduction in the amount of macroparticles sputtered onto the substrate.
公开/授权文献:
信息查询:
EspacenetIPC结构图谱:
| B | 作业；运输 |
| --B22 | 铸造；粉末冶金 |
| ----B22D | 金属铸造；用相同工艺或设备的其他物质的铸造 |
| ------B22D11/00 | 金属连续铸造，即长度不限的铸造 |