基本信息:
- 专利标题： A method for manufacturing a semiconductor device
- 申请号：JP2010117933 申请日：2010-05-24
- 公开(公告)号：JP5291666B2 公开(公告)日：2013-09-18
- 发明人： 栄二 杉山 , 芳隆 道前 , 久 大谷 , 卓也 鶴目
- 申请人： 株式会社半導体エネルギー研究所
- 专利权人： 株式会社半導体エネルギー研究所
- 当前专利权人： 株式会社半導体エネルギー研究所
- 优先权： JP2007064051 2007-03-13
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; G06K19/077 ; H01L21/20 ; H01L27/12
摘要：
The present invention provides a semiconductor device which is not easily damaged by external local pressure. The present invention further provides a method for manufacturing a highly-reliable semiconductor device, which is not destructed by external local pressure, with a high yield. A structure body, in which high-strength fiber of an organic compound or an inorganic compound is impregnated with an organic resin, is provided over an element layer having a semiconductor element formed using a non-single crystal semiconductor layer, and heating and pressure bonding are performed, whereby a semiconductor device is manufactured, to which the element layer and the structure body in which the high-strength fiber of an organic compound or an inorganic compound is impregnated with the organic resin are firmly fixed together.
公开/授权文献:
- JP2010226127A Method of manufacturing semiconductor device 公开/授权日：2010-10-07
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |