基本信息:
- 专利标题： Non-volatile semiconductor memory device
- 申请号：JP2009002376 申请日：2009-01-08
- 公开(公告)号：JP5275052B2 公开(公告)日：2013-08-28
- 发明人： 清太郎 板垣 , 佳久 岩田 , 傑 鬼頭 , 竜太 勝又 , 英明 青地 , 晃寛 仁田山 , 大 木藤 , 啓安 田中 , 高志 前田 , 智雄 菱田
- 申请人： 株式会社東芝
- 专利权人： 株式会社東芝
- 当前专利权人： 株式会社東芝
- 优先权： JP2009002376 2009-01-08
- 主分类号： H01L21/8247
- IPC分类号： H01L21/8247 ; G11C16/02 ; G11C16/04 ; H01L21/336 ; H01L27/10 ; H01L27/115 ; H01L29/788 ; H01L29/792
摘要：
A non-volatile semiconductor storage device includes: a memory string including a plurality of memory cells connected in series; a first selection transistor having one end connected to one end of the memory string; a first wiring having one end connected to the other end of the first selection transistor; a second wiring connected to a gate of the first selection transistor. A control circuit is configured to boost voltages of the second wiring and the first wiring in the erase operation, while keeping the voltage of the first wiring greater than the voltage of the second wiring by a certain potential difference. The certain potential difference is a potential difference that causes a GIDL current.
公开/授权文献:
- JP2010161199A Non-volatile semiconductor memory device 公开/授权日：2010-07-22
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/67 | .专门适用于在制造或处理过程中处理半导体或电固体器件的装置；专门适合于在半导体或电固体器件或部件的制造或处理过程中处理晶片的装置 |
| ----------H01L21/71 | ..限定在组H01L21/70中的器件的特殊部件的制造 |
| ------------H01L21/78 | ...把衬底连续地分成多个独立的器件 |
| --------------H01L21/782 | ....制造多个器件，每一个由单个电路元件组成 |
| ----------------H01L21/822 | .....衬底是采用硅工艺的半导体的 |
| ------------------H01L21/8222 | ......双极工艺 |
| --------------------H01L21/8234 | .......MIS工艺 |
| ----------------------H01L21/8239 | ........存储器结构 |
| ------------------------H01L21/8246 | .........只读存储器结构（ROM） |
| --------------------------H01L21/8247 | ..........电可编程序的 |