基本信息:
- 专利标题： Piezoelectric thin film resonator
- 申请号：JP2006090253 申请日：2006-03-29
- 公开(公告)号：JP4428354B2 公开(公告)日：2010-03-10
- 发明人： 誠 古畑 , 天光 樋口
- 申请人： セイコーエプソン株式会社
- 专利权人： セイコーエプソン株式会社
- 当前专利权人： セイコーエプソン株式会社
- 优先权： JP2006090253 2006-03-29
- 主分类号： H03H9/17
- IPC分类号： H03H9/17 ; H01L41/09 ; H01L41/18 ; H01L41/187 ; H01L41/22 ; H01L41/29
摘要：
A piezoelectric thin film resonator includes a substrate, and a resonator section formed above the substrate and having a first electrode layer, a piezoelectric layer and a second electrode layer in which acoustic vibration is generated in a thickness direction of the piezoelectric layer by application of an electric field to the piezoelectric layer by the first electrode layer and the second electrode layer, wherein at least one pair of sides of a plane configuration of the resonator section are in parallel with each other, and the shortest distance in a spacing between the parallel sides in the pair is less than a thickness of at least the resonance section.
公开/授权文献:
- JP2007267108A Piezoelectric thin film resonator 公开/授权日：2007-10-11