基本信息:
- 专利标题： Semiconductor device
- 申请号：JP2002001546 申请日：2002-01-08
- 公开(公告)号：JP4102072B2 公开(公告)日：2008-06-18
- 发明人： 和弘 江口 , 誠治 犬宮 , 祥隆 綱島
- 申请人： 株式会社東芝
- 专利权人： 株式会社東芝
- 当前专利权人： 株式会社東芝
- 优先权： JP2002001546 2002-01-08
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/31 ; C23C16/30 ; C23C16/44 ; C23C16/455 ; H01L21/02 ; H01L21/316 ; H01L29/423 ; H01L29/43 ; H01L29/49 ; H01L29/51 ; H01L29/78
摘要：
A semiconductor device comprising a semiconductor substrate, a gate dielectrics formed on the semiconductor substrate and including a silicon oxide film containing a metallic element, the silicon oxide film containing the metallic element including a first region near a lower surface thereof, a second region near an upper surface thereof, and a third region between the first and second regions, the metallic element contained in the silicon oxide film having a density distribution in a thickness direction of the silicon oxide film, a peak of the density distribution existing in the third region, and an electrode formed on the gate dielectrics.
公开/授权文献:
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/28 | ....用H01L21/20至H01L21/268各组不包含的方法或设备在半导体材料上制造电极的 |