基本信息:
- 专利标题: 半導体装置
- 专利标题(英):SEMICONDUCTOR DEVICE
- 申请号:JP2020102245 申请日:2020-06-12
- 公开(公告)号:JP2021197426A 公开(公告)日:2021-12-27
- 发明人: 小林 勇介 , 坂野 竜則 , 雁木 比呂 , 井口 智明 , 加藤 貴大 , 林 祐輔 , 下條 亮平 , 西脇 達也
- 申请人: 株式会社東芝 , 東芝デバイス&ストレージ株式会社
- 申请人地址: 東京都港区芝浦一丁目1番1号
- 专利权人: 株式会社東芝,東芝デバイス&ストレージ株式会社
- 当前专利权人: 株式会社東芝,東芝デバイス&ストレージ株式会社
- 当前专利权人地址: 東京都港区芝浦一丁目1番1号
- 代理人: 日向寺 雅彦; 小崎 純一; 市川 浩; 白井 達哲; 内田 敬人; 竹内 功
- 主分类号: H01L29/78
- IPC分类号: H01L29/78
To provide a semiconductor device that can improve the characteristics.SOLUTION: According to an embodiment, a semiconductor device includes a semiconductor member, first and second electrodes, a gate electrode, a gate terminal, a first conductive member, a first terminal, and a first insulating member. The semiconductor member includes a first semiconductor region of the first conductive type, a second semiconductor region of the first conductive type, and a third semiconductor region of the second conductive type. The gate terminal is electrically connected to the gate electrode. The first conductive member is electrically insulated from the first electrode, the second electrode, and the gate electrode. The first terminal is electrically connected to the first conductive member. The first insulating member includes a first insulating region between the third semiconductor region and the gate electrode, and a second insulating region between the gate electrode and the first conductive member. A second signal that switches at a different timing from the first signal input to the gate terminal can be input to the first terminal.SELECTED DRAWING: Figure 1
信息查询:
EspacenetIPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L29/00 | 专门适用于整流、放大、振荡或切换,并具有至少一个电位跃变势垒或表面势垒的半导体器件;具有至少一个电位跃变势垒或表面势垒,例如PN结耗尽层或载流子集结层的电容器或电阻器;半导体本体或其电极的零部件 |
--------H01L29/02 | .按其半导体本体的特征区分的 |
----------H01L29/68 | ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的 |
------------H01L29/70 | ...双极器件 |
--------------H01L29/762 | ....电荷转移器件 |
----------------H01L29/78 | .....由绝缘栅产生场效应的 |