基本信息:
- 专利标题: 薄膜蒸着用組成物、薄膜蒸着用組成物を用いた薄膜の製造方法、薄膜蒸着用組成物から製造された薄膜、および薄膜を含む半導体素子
- 专利标题(英):COMPOSITION FOR THIN FILM DEPOSITION, METHOD FOR MANUFACTURING THIN FILM BY USE THEREOF, THIN FILM MANUFACTURED FROM THE COMPOSITION FOR THIN FILM DEPOSITION, AND SEMICONDUCTOR DEVICE INCLUDING THE THIN FILM
- 申请号:JP2020171114 申请日:2020-10-09
- 公开(公告)号:JP2021064787A 公开(公告)日:2021-04-22
- 发明人: 金 容 兌 , 呉 釜 根 , 朴 景 鈴 , 成 太 根 , 任 相 均 , 林 雪 熙 , 田 桓 承
- 申请人: 三星エスディアイ株式会社 , SAMSUNG SDI Co., LTD.
- 申请人地址: 大韓民国京畿道龍仁市器興区貢税路150−20
- 专利权人: 三星エスディアイ株式会社,SAMSUNG SDI Co., LTD.
- 当前专利权人: 三星エスディアイ株式会社,SAMSUNG SDI Co., LTD.
- 当前专利权人地址: 大韓民国京畿道龍仁市器興区貢税路150−20
- 代理人: 八田国際特許業務法人
- 优先权: KR10-2019-0125525 2019-10-10
- 主分类号: H01L21/318
- IPC分类号: H01L21/318 ; H01L21/316
To improve a composition for thin film deposition in viscosity and volatility, and to provide a semiconductor device of which the electric property is highly reliable because of including a thin film manufactured from the composition for thin film deposition.SOLUTION: The invention relates to: a composition for thin film deposition, comprising an organic metal compound including strontium, barium or a combination thereof, and a compound represented by the chemical formula 1 below and including at least one unshared electron pair containing compound; a method for manufacturing a thin film by use of the composition for thin film deposition; a thin film manufactured from the composition for thin film deposition; and a semiconductor device including the thin film. The definition of R1-R3 in the chemical formula 1 is as described in the SPECIFICATION hereof.SELECTED DRAWING: Figure 3
信息查询:
EspacenetIPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |
----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体,如掺杂材料 |
--------------H01L21/26 | ....用波或粒子辐射轰击的 |
----------------H01L21/302 | .....改变半导体材料的表面物理特性或形状的,例如腐蚀、抛光、切割 |
------------------H01L21/314 | ......无机层 |
--------------------H01L21/318 | .......由氮化物组成的无机层 |