基本信息:
- 专利标题： アレイ基板及びその製造方法
- 专利标题（英）：JP2018533211A - Array substrate and manufacturing method thereof
- 申请号：JP2018518458 申请日：2015-10-21
- 公开(公告)号：JP2018533211A 公开(公告)日：2018-11-08
- 发明人： 石 龍強
- 申请人： 深▲せん▼市華星光電技術有限公司 , SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- 申请人地址： 中国広東省深▲せん▼市光明新区塘明大道9−2号
- 专利权人： 深▲せん▼市華星光電技術有限公司,SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- 当前专利权人： 深▲せん▼市華星光電技術有限公司,SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- 当前专利权人地址： 中国広東省深▲せん▼市光明新区塘明大道9−2号
- 代理人： TRY国際特許業務法人
- 优先权： CN201510655501.8 2015-10-10
- 国际申请： CN2015092357 JP 2015-10-21
- 国际公布： WO2017059607 JP 2017-04-13
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; G02F1/1368 ; G02F1/1345 ; H01L21/336
The present invention discloses an array substrate and a manufacturing method thereof. This method, by first photomask to pattern the first metal layer, and forming the placed gates and the first conductor at a distance, patterning the semiconductor layer and the gate insulating layer by a second photomask Te, forming a step of forming a through hole for exposing the first conductor, and patterning the semiconductor layer by a gate and a first conductor, a first channel region and a second channel region disposed at a distance includes a third photo mask to pattern the second metal layer, a source which is spaced, forming a drain and a second conductor, a. The second conductor is in contact with the first conductor through the through hole. By the above method, the present invention is patterning the semiconductor layer and the gate insulating layer using a single photomask, while reducing the production cost of the array substrate, the present invention is the first conductor and the second in a relatively simple manner 2 conductors and bridge can improve the production efficiency of the array substrate.
公开/授权文献:
- JP6555843B2 アレイ基板及びその製造方法 公开/授权日：2019-08-07
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L29/00 | 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件 |
| --------H01L29/02 | .按其半导体本体的特征区分的 |
| ----------H01L29/68 | ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的 |
| ------------H01L29/70 | ...双极器件 |
| --------------H01L29/762 | ....电荷转移器件 |
| ----------------H01L29/78 | .....由绝缘栅产生场效应的 |
| ------------------H01L29/786 | ......薄膜晶体管 |