基本信息:
- 专利标题： 半導体発光素子
- 专利标题（英）：JP2018198340A - Semiconductor light-emitting element
- 申请号：JP2018177875 申请日：2018-09-21
- 公开(公告)号：JP2018198340A 公开(公告)日：2018-12-13
- 发明人： 上山 智 , 岩谷 素顕 , 天野 浩 , 赤崎 勇 , 近藤 俊行 , 寺前 文晴 , 北野 司 , 鈴木 敦志
- 申请人： エルシード株式会社
- 申请人地址： 愛知県名古屋市天白区梅が丘3丁目1804番地の2
- 专利权人： エルシード株式会社
- 当前专利权人： エルシード株式会社
- 当前专利权人地址： 愛知県名古屋市天白区梅が丘3丁目1804番地の2
- 代理人： 重泉 達志
- 优先权： JP2009205931 2009-09-07
- 主分类号： H01L33/10
- IPC分类号： H01L33/10 ; H01L33/32 ; H01L33/22
A by suppressing reflection between the semiconductor layer and the transparent substrate to improve the light extraction efficiency.
In A semiconductor light emitting device, the semiconductor lamination portion formed on the surface of the substrate including the light-emitting layer and the larger the light than the optical wavelength of the formed on the surface side of the substrate the incident light emitted from the light-emitting layer the light so that the provided and diffractive surface concave or convex portion is formed with a smaller period than the coherence length, and a reflecting surface for incident again by reflecting light diffracted on the diffraction surface in formed on the back side of the substrate diffractive surface It was.
.FIELD 1