基本信息:
- 专利标题: ウェーハのレーザ加工方法
- 专利标题(英):JP2018181938A - Laser processing method of the wafer
- 申请号:JP2017075405 申请日:2017-04-05
- 公开(公告)号:JP2018181938A 公开(公告)日:2018-11-15
- 发明人: 伴 祐人
- 申请人: 株式会社ディスコ
- 申请人地址: 東京都大田区大森北二丁目13番11号
- 专利权人: 株式会社ディスコ
- 当前专利权人: 株式会社ディスコ
- 当前专利权人地址: 東京都大田区大森北二丁目13番11号
- 代理人: 松本 昂; 岡本 知広; 笠原 崇廣
- 主分类号: B23K26/364
- IPC分类号: B23K26/364 ; B23K26/38 ; B23K26/064 ; H01L21/301
A suppressing interference with the irradiation of the subsequent laser beam by debris or the like generated by irradiation of the preceding laser beam.
A laser machining apparatus comprising a laser beam irradiation unit for irradiating a laser beam oscillated by the oscillator laser beam a plurality of laser beams formed is branched by the branching unit to the wafer held on the chuck table through the condenser lens used, a laser processing method of the wafer for processing the wafer which is divided by a plurality of dividing lines are set in a lattice pattern on the surface, irradiating the wafer along the laser beam of the plurality of the said dividing line and, machining a groove along the dividing lines comprising a groove forming step of forming on the wafer, the processing in the groove forming step, a laser beam of the plurality of branched by the laser beam branching unit, the laser of the plurality of arranged in rows relative to the extension direction of the dividing lines beam is irradiated to the non-parallel directions .
.Field
公开/授权文献:
- JP6935126B2 ウェーハのレーザ加工方法 公开/授权日:2021-09-15
信息查询:
EspacenetIPC结构图谱:
B23K26/001 | .这个大组包括:激光加工用于制造削弱层,有或没有移除材料 |
--B23K26/352 | .用于表面处理的 |
----B23K26/362 | ..激光刻蚀 |
------B23K26/364 | ...用于制造槽或沟的,例如刻出一个断开的起始槽 |