An object of the present invention is to provide an excellent semiconductor device or a light-emitting device of the reliability using an oxide semiconductor.
It includes an A oxide first electrode 401 connected to the source or drain electrode layer of the transistor 410 including a semiconductor, a light emitting substance between the second electrode 402 overlapping with the first electrode in the semiconductor device having an organic layer 403, the second electrode, eliminating the active conducting material that emits hydrogen ion or hydrogen molecules by reducing impurities (e.g. water) containing a hydrogen atom. In particular, it reacts with water using an inert conductive materials hardly generate hydrogen ions or hydrogen molecule, in a semiconductor device including an oxide semiconductor. Specifically, the metal oxide reduction potential larger than that of the standard hydrogen electrode, oxidation-reduction potential is large conductive metal oxide than the alloy to oxidation-reduction potential of greater metal together in comparison with a standard hydrogen electrode within the standard hydrogen electrode use things.
.FIELD 1