【Task】
A dual chamber configuration system for processing a semiconductor substrate in a pulsed plasma chamber, methods, and computer program are provided. Wafer processing apparatus having an upper chamber and a lower chamber separated by a plate fluid communication with the upper chamber to the lower chamber comprises a continuous wave (CW) controller, and a pulse controller, and the system controller. CW controller is operable to set a first radio frequency (RF) voltage and frequency of the power source connected to the upper electrode in the upper chamber. Pulse controller, the voltage of the pulsed RF signal generated by the second RF power source connected to the lower electrode in the lower chamber, the frequency, the duration of the ON period, and, to set the duration of the OFF period it is operable. Further, the system controller in order to control the flow of seeds passing through the lower chamber from the upper chamber through the plate during the operation of the chamber, is operable to set the parameters of the CW controller and pulse controller. Kind of flow, to assist and negative ion etching, and neutralization of excess positive charge in the wafer surface in the after-glow of the off period, and the re-ignition of the plasma in the lower chamber during the on-time, the.
.FIELD 4