基本信息:
- 专利标题： Semiconductor pressure sensor and manufacturing method thereof
- 专利标题（中）：半导体压力传感器及其制造方法
- 申请号：JP2012268539 申请日：2012-12-07
- 公开(公告)号：JP2014115153A 公开(公告)日：2014-06-26
- 发明人： SATO KIMITOSHI
- 申请人： Mitsubishi Electric Corp , 三菱電機株式会社
- 专利权人： Mitsubishi Electric Corp,三菱電機株式会社
- 当前专利权人： Mitsubishi Electric Corp,三菱電機株式会社
- 优先权： JP2012268539 2012-12-07
- 主分类号： G01L9/00
- IPC分类号： G01L9/00 ; H01L29/84
摘要：
PROBLEM TO BE SOLVED: To provide a semiconductor pressure sensor that can be easily manufactured and a method for manufacturing the same.SOLUTION: In a pressure sensor region 16 of a pressure sensor, fixed electrode 18a, a gap 51, and a movable electrode 30d are formed; and in a CMOS region 17, a memory cell transistor and a field effect transistor are formed. An etching hole 46b communicating with the gap 51 is sealed by a first sealing film 48b. The gap 51 is formed by removing a portion composed of the same film as that of a gate electrode 23a of the memory cell transistor. The movable electrode 30d is formed of the same film as that of gate electrodes 30c, 30a, and 30b.
摘要（中）：
要解决的问题：提供一种容易制造的半导体压力传感器及其制造方法。解决方案：在压力传感器，固定电极18a，间隙51和可动电极30d的压力传感器区域16中 形成; 并且在CMOS区域17中，形成存储单元晶体管和场效应晶体管。 与间隙51连通的蚀刻孔46b由第一密封膜48b密封。 通过去除由与存储单元晶体管的栅电极23a相同的膜构成的部分来形成间隙51。 可动电极30d由与栅电极30c，30a，30b相同的膜形成。
公开/授权文献:
- JP5832417B2 半導体圧力センサおよびその製造方法 公开/授权日：2015-12-16