发明专利
JP2014112706A Optical mechanism for euv lithography and method for configuring optical mechanism
有权
基本信息:
- 专利标题: Optical mechanism for euv lithography and method for configuring optical mechanism
- 专利标题(中):用于EUV光刻的光学机构和配置光学机制的方法
- 申请号:JP2014013669 申请日:2014-01-28
- 公开(公告)号:JP2014112706A 公开(公告)日:2014-06-19
- 发明人: CLAUSS WILFRIED
- 申请人: Carl Zeiss Smt Gmbh , カール・ツァイス・エスエムティー・ゲーエムベーハー
- 专利权人: Carl Zeiss Smt Gmbh,カール・ツァイス・エスエムティー・ゲーエムベーハー
- 当前专利权人: Carl Zeiss Smt Gmbh,カール・ツァイス・エスエムティー・ゲーエムベーハー
- 优先权: DE102011085358 2011-10-28
- 主分类号: H01L21/027
- IPC分类号: H01L21/027 ; C03B25/02 ; C03C3/06 ; C03C3/076 ; G02B5/08 ; G02B7/182 ; G02B19/00 ; G03F1/22 ; G03F1/60
摘要:
PROBLEM TO BE SOLVED: To provide an optical mechanism for EUV lithography and a method for configuring the optical mechanism in which deformation due to an influence of temperature is reduced.SOLUTION: A reflective coating 31 is applied to a substrate 32, the reflective coating having a plurality of individual layers that alternately consist of materials having different refractive indices. The reflective coating can also comprise an intermediate layer for preventing diffusion and a capping layer 31a for preventing oxidation or corrosion. The substrate 32 is applied to a carrier 33, in which a plurality of heating elements 33a in the form of Peltier elements are provided; and these elements serve for homogeneously heating the substrate 32 to a use temperature. A temperature sensor 35 is provided laterally on the substrate 32 and is connected to a control device for controlling the temperature of the substrate 32 to the use temperature by a closed loop. Deformations and/or changes in a length of the substrate 32 caused by temperature fluctuations are avoided by controlling the use temperature to correspond as exactly as possible to the zero crossing temperature of the coefficient of thermal expansion of the substrate 32.
摘要(中):
要解决的问题:提供一种用于EUV光刻的光学机构和一种用于配置由于温度影响而导致的变形的光学机构的方法。解决方案:将反射涂层31施加到基板32,反射涂层具有 由折射率不同的材料交替组成的多个单独的层。 反射涂层还可以包括用于防止扩散的中间层和用于防止氧化或腐蚀的覆盖层31a。 衬底32被施加到载体33上,其中提供了多个形式为珀尔帖元件的加热元件33a; 并且这些元件用于将基板32均匀加热至使用温度。 温度传感器35横向设置在基板32上,并连接到控制装置,用于通过闭环控制基板32的温度达到使用温度。 通过控制使用温度与基板32的热膨胀系数的过零点温度尽可能对应来避免由温度波动引起的基板32的长度的变形和/或变化。
公开/授权文献:
- JP6127001B2 EUVリソグラフィ用の光学機構及び該光学機構を構成する方法 公开/授权日:2017-05-10
信息查询:
EspacenetIPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |
----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |