发明专利
JP2013191895A Semiconductor laser element, method for driving the same, and semiconductor laser device
审中-公开
基本信息:
- 专利标题： Semiconductor laser element, method for driving the same, and semiconductor laser device
- 专利标题（中）：半导体激光元件及其驱动方法及半导体激光器件
- 申请号：JP2013139507 申请日：2013-07-03
- 公开(公告)号：JP2013191895A 公开(公告)日：2013-09-26
- 发明人： KURAMOTO MASARU , OKI TOMOYUKI , SUGAWARA TOMOYA , YOKOYAMA HIROYUKI
- 申请人： Sony Corp , ソニー株式会社 , Tohoku Univ , 国立大学法人東北大学
- 专利权人： Sony Corp,ソニー株式会社,Tohoku Univ,国立大学法人東北大学
- 当前专利权人： Sony Corp,ソニー株式会社,Tohoku Univ,国立大学法人東北大学
- 优先权： JP2013139507 2013-07-03
- 主分类号： H01S5/065
- IPC分类号： H01S5/065 ; H01S5/042 ; H01S5/343
摘要：
PROBLEM TO BE SOLVED: To provide a semiconductor laser element of ultra short pulse and ultra high output, capable of emitting a pulse laser beam having higher peak power notwithstanding its simple configuration and structure.SOLUTION: A semiconductor laser element comprises: (A) a laminated structure composed of a first compound semiconductor layer 30 containing an n-type impurity, an active layer 40 having a quantum well structure, and a second compound semiconductor layer 50 containing a p-type impurity; (B) a first electrode 61 electrically connected to the first compound semiconductor layer 30; and (C) a second electrode 62 electrically connected to the second compound semiconductor layer 50. The second compound semiconductor layer 50 is provided with an electron barrier layer 53 having a thickness of not less than 1.5×10m. The second electrode 62 is separated into a first portion 62A and a second portion 62B by an isolation groove 63. The semiconductor laser element is driven by a pulse voltage having a value twice or more of a threshold voltage.
摘要（中）：
要解决的问题：提供一种具有超短脉冲和超高输出的半导体激光元件，其能够发射具有较高峰值功率的脉冲激光束，尽管其结构和结构简单。解决方案：半导体激光元件包括：（A） 由包含n型杂质的第一化合物半导体层30，具有量子阱结构的有源层40和含有p型杂质的第二化合物半导体层50组成的层叠结构; （B）与第一化合物半导体层30电连接的第一电极61; 和（C）与第二化合物半导体层50电连接的第二电极62.第二化合物半导体层50设置有厚度不小于1.5×10μm的电子阻挡层53。 第二电极62通过隔离槽63分成第一部分62A和第二部分62B。半导体激光元件由具有阈值电压的两倍或更多值的脉冲电压驱动。