基本信息:
- 专利标题: Imprint device and method of manufacturing article using the same
- 专利标题(中):印刷装置及其制造方法
- 申请号:JP2013006827 申请日:2013-01-18
- 公开(公告)号:JP2013175709A 公开(公告)日:2013-09-05
- 发明人: MATSUDA YOZO , HASEGAWA TAKAYASU , OKEURA MITSURU , HAYASHI TATSUYA
- 申请人: Canon Inc , キヤノン株式会社
- 专利权人: Canon Inc,キヤノン株式会社
- 当前专利权人: Canon Inc,キヤノン株式会社
- 优先权: JP2012015558 2012-01-27; JP2013006827 2013-01-18
- 主分类号: H01L21/027
- IPC分类号: H01L21/027 ; B29C59/02
摘要:
PROBLEM TO BE SOLVED: To provide an imprint device which has an advantage in simplifying a mechanism for thermally correcting shape of a processed region of a substrate or shape of a pattern region of a die.SOLUTION: The imprint device forms a resin pattern on a processed region of a substrate by using a die containing a pattern region in which a pattern is formed. It includes a correction means for correcting shape of a target region which is any one of a pattern region of the die and the processed region of the substrate. The correction means includes a heating means for heating an object corresponding to the target region of the die and substrate in a heating region having an area smaller than the area of pattern region of the die, a scan means which changes relative position between the target region and the heating region so that the target region is scanned with the heating region, and a control means which acquires information about a corrective deformation amount of the target region, to control the heating means and the scan means based on the information.
摘要(中):
要解决的问题:提供一种压印装置,其具有简化用于热校正基板的处理区域的形状或模具的图案区域的形状的机构的优点。解决方案:压印装置在 通过使用包含其中形成图案的图案区域的模具来处理衬底的处理区域。 它包括用于校正作为模具的图案区域和基板的处理区域中的任何一个的目标区域的形状的校正装置。 校正装置包括加热装置,用于在具有小于模具的图案区域的面积的加热区域中加热与模具和基板的目标区域相对应的物体;扫描装置,其改变目标区域之间的相对位置 以及加热区域,使得目标区域被加热区域扫描,以及控制装置,其获取关于目标区域的校正变形量的信息,以基于该信息来控制加热装置和扫描装置。
公开/授权文献:
- JP6045363B2 インプリント装置、それを用いた物品の製造方法 公开/授权日:2016-12-14
信息查询:
EspacenetIPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |
----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |