PROBLEM TO BE SOLVED: To provide a removing liquid composition for removing a photoresist residue and a polymer residue generated in a process for manufacturing a semiconductor circuit element having a metal wiring, and a method for removing residues using the same, in particular, a photoresist residue and polymer residue removing liquid composition which does not contain a nitrogen-containing organic hydroxy compound, ammonia and a fluorine compound, contains as a residue removing component an aliphatic polycarboxylic acid having excellent metal oxide-based residue removing properties and a melting point of 25°C or higher, and can inhibit recrystallization of the aliphatic polycarboxylic acid by evaporation of water after the solution adheres to a liquid ejection nozzle of a cleaning device, a cleaning tank and the periphery of a chamber, and a method for removing residues using the same.SOLUTION: The photoresist residue and polymer residue removing liquid composition containing an aliphatic polycarboxylic acid having a melting point of 25°C or higher contains a water-miscible organic solvent having a hydroxyl group within the structure and a vapor pressure at 20°C of 17 mmHg or less.