基本信息:
- 专利标题: Film for flip chip type semiconductor back surface
- 专利标题(中):片状薄膜型半导体背面膜
- 申请号:JP2010253084 申请日:2010-11-11
- 公开(公告)号:JP2011151361A 公开(公告)日:2011-08-04
- 发明人: TAKAMOTO HISAHIDE , MATSUMURA TAKESHI , SHIGA GOSHI
- 申请人: Nitto Denko Corp , 日東電工株式会社
- 专利权人: Nitto Denko Corp,日東電工株式会社
- 当前专利权人: Nitto Denko Corp,日東電工株式会社
- 优先权: JP2009292768 2009-12-24; JP2010253084 2010-11-11
- 主分类号: H01L21/301
- IPC分类号: H01L21/301 ; C09J7/02
摘要:
PROBLEM TO BE SOLVED: To provide a film for a flip chip type semiconductor back surface, showing an excellent retaining force in a dicing process of a semiconductor wafer, separating a semiconductor chip from a base material with improved pickup properties along with the film for a flip chip type semiconductor back surface in a pickup process, and suppressing or preventing sticking of the semiconductor chip to a support via the film for a flip chip type semiconductor back surface even if the semiconductor chip having the back surface protected by the film for a flip chip type semiconductor back surface, is placed on the support after the pickup process.
SOLUTION: The film for a flip chip type semiconductor back surface has a multilayer structure including a wafer adhesive layer 22 and a laser mark layer 21, where a modulus of elasticity (at 50°C) of the wafer adhesive layer 22 is not more than 10 MPa and a modulus of elasticity (at 50°C) of the laser mark layer 21 is not less than 100 MPa.
COPYRIGHT: (C)2011,JPO&INPIT
摘要(中):
SOLUTION: The film for a flip chip type semiconductor back surface has a multilayer structure including a wafer adhesive layer 22 and a laser mark layer 21, where a modulus of elasticity (at 50°C) of the wafer adhesive layer 22 is not more than 10 MPa and a modulus of elasticity (at 50°C) of the laser mark layer 21 is not less than 100 MPa.
COPYRIGHT: (C)2011,JPO&INPIT
要解决的问题:为了提供一种用于倒装芯片型半导体背表面的膜,在半导体晶片的切割工艺中显示出优异的保持力,将半导体芯片与具有改善的拾取特性的基材分离,以及 在拾取过程中用于倒装芯片型半导体背表面的膜,并且即使具有由膜保护的背面的半导体芯片,也可以抑制或防止半导体芯片通过用于倒装芯片型半导体背表面的膜而粘附到支撑体上 对于倒装芯片型半导体背表面,在拾取过程之后放置在支撑件上。 解决方案:用于倒装芯片型半导体背表面的膜具有包括晶片粘合剂层22和激光标记层21的多层结构,其中晶片粘合剂层22的弹性模量(在50℃)为 激光标记层21的不超过10MPa,弹性模量(50℃)为100MPa以上。 版权所有(C)2011,JPO&INPIT
公开/授权文献:
- JP5456642B2 Film for flip chip type semiconductor back 公开/授权日:2014-04-02
信息查询:
EspacenetIPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |
----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体,如掺杂材料 |
--------------H01L21/26 | ....用波或粒子辐射轰击的 |
----------------H01L21/301 | .....把半导体再细分成分离部分,例如分隔 |