发明专利
JP2010500559A A method of forming the nanowire sensor, the nanowire sensor array, and the sensors and sensor array
审中-公开
基本信息:
- 专利标题： A method of forming the nanowire sensor, the nanowire sensor array, and the sensors and sensor array
- 申请号：JP2009523747 申请日：2006-08-11
- 公开(公告)号：JP2010500559A 公开(公告)日：2010-01-07
- 发明人： アガーワル、アジェイ , クマール、ラケシュ , シン、ナバブ , バラスブラマニアン、ナラヤナン , キン ラオ、イエン
- 申请人： エージェンシー フォー サイエンス,テクノロジー アンド リサーチ
- 专利权人： エージェンシー フォー サイエンス,テクノロジー アンド リサーチ
- 当前专利权人： エージェンシー フォー サイエンス，テクノロジー アンド リサーチ
- 优先权： SG2006000227 2006-08-11
- 主分类号： G01N27/00
- IPC分类号： G01N27/00 ; B82B1/00 ; B82B3/00 ; H01L21/329 ; H01L29/06 ; H01L29/786
A sensor comprising a nanowire on the support substrate, a method of the first semiconductor layer to form a sensor, disposed on the support substrate is disclosed. The method comprises a first semiconductor layer, and at least two support portions, and the fin portion disposed between the supporting portion, process and forming a fin structure containing; oxidizing at least the fin of the fin structure forming a nanowire is surrounded by a first oxide layer by; wherein the step of the insulating layer is formed on the support portion, the support portion and the first insulating layer constitutes a microfluidic channel. Also nanowire sensor is disclosed. Nanowire sensor support substrate and; disposed on the support substrate, and at least two semiconductor supporting portion, the semiconductor fin structure and includes a fin portion disposed between the support portion, the; contact surface of the support portion and a first insulating layer on the support portion and the first insulating layer constitutes a microfluidic channel.
信息查询:
EspacenetIPC结构图谱:
| G | 物理 |
| --G01 | 测量；测试 |
| ----G01N | 借助于测定材料的化学或物理性质来测试或分析材料 |
| ------G01N27/00 | 用电、电化学或磁的方法测试或分析材料 |