发明专利
JP2009089028A Method of driving ccd solid-state image pickup device, and image pickup apparatus
审中-公开
基本信息:
- 专利标题： Method of driving ccd solid-state image pickup device, and image pickup apparatus
- 专利标题（中）：驱动CCD固态摄像装置的方法和图像拾取装置
- 申请号：JP2007256227 申请日：2007-09-28
- 公开(公告)号：JP2009089028A 公开(公告)日：2009-04-23
- 发明人： KUSUDA DAISUKE , KOBAYASHI HIROKAZU , ODA KAZUYA
- 申请人： Fujifilm Corp , 富士フイルム株式会社
- 专利权人： Fujifilm Corp,富士フイルム株式会社
- 当前专利权人： Fujifilm Corp,富士フイルム株式会社
- 优先权： JP2007256227 2007-09-28
- 主分类号： H01L27/148
- IPC分类号： H01L27/148 ; H04N5/335 ; H04N5/365 ; H04N5/3728 ; H04N101/00
摘要：
PROBLEM TO BE SOLVED: To suppress variation in electron multiplication factor in an element.
SOLUTION: Successive transfer electrodes Vi, Vi+1, Vi+2, ..., Vi+j applied with transfer pulses ϕVi, ϕVi+1, ϕVi+2, ..., ϕVi+j (i, j: arbitrary) are defined as a transfer electrode group of one line and the transfer electrode group is provided repeatedly over a plurality of lines along a charge transfer path. In this case, a multiplying potential well 43 is formed in a certain line (place A) to perform multiplication, signal charges having been multiplied are transferred to a next line (place B) in a transfer direction, and then a multiplying potential well 43 is formed in the next line to perform multiplication again. Thus, multiplication is repeated while lines are changed to average variation in electron amplification factor depending on places.
COPYRIGHT: (C)2009,JPO&INPIT
摘要（中）：
SOLUTION: Successive transfer electrodes Vi, Vi+1, Vi+2, ..., Vi+j applied with transfer pulses ϕVi, ϕVi+1, ϕVi+2, ..., ϕVi+j (i, j: arbitrary) are defined as a transfer electrode group of one line and the transfer electrode group is provided repeatedly over a plurality of lines along a charge transfer path. In this case, a multiplying potential well 43 is formed in a certain line (place A) to perform multiplication, signal charges having been multiplied are transferred to a next line (place B) in a transfer direction, and then a multiplying potential well 43 is formed in the next line to perform multiplication again. Thus, multiplication is repeated while lines are changed to average variation in electron amplification factor depending on places.
COPYRIGHT: (C)2009,JPO&INPIT
要解决的问题：抑制元件中电子倍增因子的变化。
解决方案：连续转移电极Vi，Vi + 1，Vi + 2，...，Vi + j施加转移脉冲φVi，φVi+ 1，φVi+ 2，...，φVi+ j（i，j ：任意）被定义为一行的转印电极组，并且转印电极组沿着电荷转移路径重复地设置在多条线上。 在这种情况下，乘法电位阱43形成在某一行（位置A）中以进行乘法，已经相乘的信号电荷在传送方向上传送到下一行（地点B），然后乘以乘法电位阱43 形成在下一行以再次执行乘法。 因此，重复乘法，而线根据位置改变为电子放大因子的平均变化。 版权所有（C）2009，JPO＆INPIT
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L27/00 | 由在一个共用衬底内或其上形成的多个半导体或其他固态组件组成的器件 |
| --------H01L27/02 | .包括有专门适用于整流、振荡、放大或切换的半导体组件并且至少有一个电位跃变势垒或者表面势垒的；包括至少有一个跃变势垒或者表面势垒的无源集成电路单元的 |
| ----------H01L27/144 | ..由辐射控制的器件 |
| ------------H01L27/146 | ...图像结构 |
| --------------H01L27/148 | ....电荷耦合图像器件 |