基本信息:
- 专利标题： Semiconductor amplifier
- 专利标题（中）：半导体放大器
- 申请号：JP2004213745 申请日：2004-07-22
- 公开(公告)号：JP2006033772A 公开(公告)日：2006-02-02
- 发明人： KANEKO TETSUYA
- 申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
- 专利权人： Matsushita Electric Ind Co Ltd,松下電器産業株式会社
- 当前专利权人： Matsushita Electric Ind Co Ltd,松下電器産業株式会社
- 优先权： JP2004213745 2004-07-22
- 主分类号： H03F1/32
- IPC分类号： H03F1/32 ; H01L23/36 ; H01L25/00 ; H03F1/30 ; H03F3/68
摘要：
PROBLEM TO BE SOLVED: To provide a high-output semiconductor amplifier in which semiconductor chips are all symmetrically arranged to reduce imbalance of strain, an increase in variance in chip life, and expansion of nonlinearity.
SOLUTION: A plurality of semiconductor chips 10 which constitute the amplifier are connected in parallel, all arranged at mutually symmetrical positions in parallel, and further arranged on the inner wall surface of a cylindrical case 7, and heat radiation fins 7a are provided on the outer wall surface of the case 7.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要（中）：
SOLUTION: A plurality of semiconductor chips 10 which constitute the amplifier are connected in parallel, all arranged at mutually symmetrical positions in parallel, and further arranged on the inner wall surface of a cylindrical case 7, and heat radiation fins 7a are provided on the outer wall surface of the case 7.
COPYRIGHT: (C)2006,JPO&NCIPI
要解决的问题：提供一种高输出半导体放大器，其中半导体芯片都对称地布置以减少应变的不平衡，芯片寿命的变化的增加和非线性的扩大。 解决方案：构成放大器的多个半导体芯片10并联连接，均并排布置在相互对称的位置，并且还布置在圆筒形壳体7的内壁表面上，并且设置有散热片7a 在案件7的外墙表面上。（C）2006年，JPO＆NCIPI
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H03 | 基本电子电路 |
| ----H03F | 放大器 |
| ------H03F1/00 | 只用电子管，只用半导体器件或只用未特别指明的器件作为放大元件的放大器的零部件 |
| --------H03F1/32 | .为减少非线性失真对放大器的改进 |