基本信息:
- 专利标题: High density nanostructuring interconnection
- 专利标题(中):高密度纳米结构互连
- 申请号:JP2005105721 申请日:2005-04-01
- 公开(公告)号:JP2005294844A 公开(公告)日:2005-10-20
- 发明人: BASAVANHALLY NAGESH R , CIRELLI RAYMOND A , LOPEZ OMAR DANIEL
- 申请人: Lucent Technol Inc , ルーセント テクノロジーズ インコーポレーテッド
- 专利权人: Lucent Technol Inc,ルーセント テクノロジーズ インコーポレーテッド
- 当前专利权人: Lucent Technol Inc,ルーセント テクノロジーズ インコーポレーテッド
- 优先权: US81652704 2004-04-01
- 主分类号: B82B1/00
- IPC分类号: B82B1/00 ; B81B7/00 ; B82B3/00 ; H01L21/60 ; H01L21/768 ; H01L23/373 ; H01L23/485 ; H01L23/49
摘要:
PROBLEM TO BE SOLVED: To provide an apparatus and a method for thermally and/or electrically connecting electronic components. SOLUTION: A method and an apparatus for forming an electric and/or heat conductive interconnection are disclosed. In this connection, a first surface and a second surface are brought into contact with each other through a nanostructure arranged on at lest one surface thereof. In an embodiment, there are exemplified a first plurality of regions of nanostructures in a component in an electronic package such as a microprocessor. Then, the first plurality of regions are brought into contact with corresponding a second plurality of regions of nanostructures on a substrate, to cause strong friction coupling. In the other embodiment as exemplification, the plurality of nanostructures are arranged on the component such as a microprocessor, and such nanostructures are brought into contact with the substrate. An intermolecular force permits the application of an attracting force between a molecule of the nanostructure and a molecule of the substrate, thereby establishing coupling between the nanostructure and the substrate. COPYRIGHT: (C)2006,JPO&NCIPI
摘要(中):
要解决的问题:提供用于热和/或电连接电子部件的装置和方法。 公开了一种用于形成电和/或导热互连的方法和装置。 在这方面,第一表面和第二表面通过布置在其一个表面上的纳米结构彼此接触。 在一个实施例中,例示了诸如微处理器的电子封装中的部件中的第一多个纳米结构区域。 然后,使第一多个区域与基板上相应的第二多个纳米结构区域相接触,引起强烈的摩擦耦合。 在另一实施例中,作为示例,将多个纳米结构布置在诸如微处理器的部件上,并且使这样的纳米结构与基板接触。 分子间力允许在纳米结构的分子和基底的分子之间施加吸引力,从而在纳米结构和基底之间建立耦合。 版权所有(C)2006,JPO&NCIPI