基本信息:
- 专利标题： Thin film deposition method, and cvd system
- 申请号：JP2002366924 申请日：2002-12-18
- 公开(公告)号：JP2004197159A 公开(公告)日：2004-07-15
- 发明人： NISHINO JUNICHI , NOSAKA YOSHIO
- 申请人： Nagaoka University Of Technology , 長岡技術科学大学長
- 专利权人： Nagaoka University Of Technology,長岡技術科学大学長
- 当前专利权人： Nagaoka University Of Technology,長岡技術科学大学長
- 优先权： JP2002366924 2002-12-18
- 主分类号： B01J19/00
- IPC分类号： B01J19/00 ; C23C16/46
摘要：
PROBLEM TO BE SOLVED: To provide a method by which a thin film of oxide can be deposited on the substrate to be treated without using a vacuum, and also, at a temperature lower than that in the conventional method, and to provide a CVD (Chemical Vapor Deposition) system therefor.
SOLUTION: The CVD system is, e.g., composed of a reaction chamber 10 capable of atmospheric control, a raw material vaporization tank 7 arranged therein with a raw material for thermal deposition reaction stored therein, a susceptor 2 holding a substrate 6 as the object for treatment to the upper direction of the raw material vaporization tank 7 so as to be close thereto, and a heater 3 controlling the temperature of the substrate 6. The substrate 6 as the object for treatment is heated, and the raw material is heated and vaporized by radiation heat from the substrate 6 to cause thermal decomposition reaction on the substrate 6, by which a thin film consisting of a product by the thermal decomposition reaction is deposited on the substrate 6.
COPYRIGHT: (C)2004,JPO&NCIPI
SOLUTION: The CVD system is, e.g., composed of a reaction chamber 10 capable of atmospheric control, a raw material vaporization tank 7 arranged therein with a raw material for thermal deposition reaction stored therein, a susceptor 2 holding a substrate 6 as the object for treatment to the upper direction of the raw material vaporization tank 7 so as to be close thereto, and a heater 3 controlling the temperature of the substrate 6. The substrate 6 as the object for treatment is heated, and the raw material is heated and vaporized by radiation heat from the substrate 6 to cause thermal decomposition reaction on the substrate 6, by which a thin film consisting of a product by the thermal decomposition reaction is deposited on the substrate 6.
COPYRIGHT: (C)2004,JPO&NCIPI