发明专利
JP2000355753A ARTICLE HAVING SUBSTRATE CONTAINING SILICON AND BARRIER LAYER CONTAINING YTTRIUM, AND ITS PRODUCTION
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基本信息:
- 专利标题: ARTICLE HAVING SUBSTRATE CONTAINING SILICON AND BARRIER LAYER CONTAINING YTTRIUM, AND ITS PRODUCTION
- 申请号:JP2000115747 申请日:2000-04-17
- 公开(公告)号:JP2000355753A 公开(公告)日:2000-12-26
- 发明人: EATON HARRY E JR , ALLEN WILLIAM P , JACOBSON NATHAN S , LEE KANG N , OPILA ELIZABETH J , SMIALEK JAMES L , WANG HONGYU , MESCHTER PETER J , LUTHRA KRISHAN L
- 申请人: UNITED TECHNOLOGIES CORP , GEN ELECTRIC , NASA , UNITED TECHNOLOGIES CORP , GEN ELECTRIC , NASA
- 专利权人: UNITED TECHNOLOGIES CORP,GEN ELECTRIC,NASA,UNITED TECHNOLOGIES CORP,GEN ELECTRIC,NASA
- 当前专利权人: UNITED TECHNOLOGIES CORP,GEN ELECTRIC,NASA,UNITED TECHNOLOGIES CORP,GEN ELECTRIC,NASA
- 优先权: US29234899 1999-04-15
- 主分类号: B05D3/12
- IPC分类号: B05D3/12 ; B05D7/00 ; B05D7/14 ; B05D7/24 ; B32B15/04 ; B32B18/00 ; B32B27/00 ; C04B41/50 ; C04B41/52 ; C04B41/85 ; C04B41/87 ; C04B41/89 ; C23C4/02 ; C23C4/06 ; C23C4/10 ; C23C4/18 ; C23C8/10 ; C23C30/00
摘要:
PROBLEM TO BE SOLVED: To prevent the formation and dissipation of a gaseous Si compd. from a substrate under a high-temp. environment containing moisture by forming a barrier layer contg. Y2O3 or the like and having a thermal expansion coefficient approximate to that of the substrate into a specified thickness on a substrate consisting of Si-contg. ceramics, an Si-contg. alloy or the like. SOLUTION: On the Si-contg. substrate consisting or ceramics such as SiC and an Mo-Si alloy, a barrier layer for environmental and thermal protection is formed. As this barrier layer, the one contg. Y2O3, Y2SiO5 or the like is preferable, e.g. it is consisting of about 66 to 78 wt.% Y2O3, and the balance SiO2, and its thermal expansion coefficient is controlled to be ±3.0 ppm/ deg.C of that of the substrate, and its thickness is controlled to about 0.0127 to 0.127 mm. If necessary, an intermediate layer having about 0.0762 to 0.762 mm thickness and consisting of SiO2, mullite or the like and a bond layer having about 0.0762 to 0.152 mm thickness and consisting of Si, SiO2 or the like are formed between the substrate and the barrier layer. The barrier layer is formed preferably by thermal spraying after applying grit blasting at need.
公开/授权文献:
- JP3866002B2 公开/授权日:2007-01-10
信息查询:
EspacenetIPC结构图谱:
B | 作业;运输 |
--B05 | 一般喷射或雾化;对表面涂覆液体或其他流体的一般方法 |
----B05D | 一般对表面涂布液体或其他流体的工艺 |
------B05D3/00 | 涂布液体或其他流体的表面的预处理;已有涂层的后处理,例如要用液体或其他流体作后续涂布的已有的涂层的中间处理 |
--------B05D3/12 | .机械方法 |