基本信息:
- 专利标题： METHOD FOR FORMING DEPOSITION FILM
- 申请号：EP22900910.5 申请日：2022-10-07
- 公开(公告)号：EP4443478A1 公开(公告)日：2024-10-09
- 发明人： SATO Daisuke , OKA Yuki , TANIWAKI Moe
- 申请人： Resonac Corporation
- 申请人地址： JP Tokyo 105-7325 9-1, Higashi-Shimbashi 1-chome Minato-ku
- 专利权人： Resonac Corporation
- 当前专利权人： Resonac Corporation
- 当前专利权人地址： JP Tokyo 105-7325 9-1, Higashi-Shimbashi 1-chome Minato-ku
- 代理机构： Strehl Schübel-Hopf & Partner
- 优先权： JP 21196385 2021.12.02
- 国际申请： JP2022037688 2022.10.07
- 国际公布： WO2023100476 2023.06.08
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/3065 ; H01L21/316 ; H01L21/318
摘要：
Provided is a method for forming a deposition film, with which a deposition film having improved uniformity of a film thickness can be formed. The method for forming a deposition film is a method for forming a deposition film on a substrate (21) on which a pattern (22) is formed, and the method includes a deposition step of placing the substrate (21) on an electrode and applying bias power to the electrode to form a deposition film (40) on the substrate (21) using plasma obtained by plasma-processing a deposition gas. A material constituting the pattern (22) is at least one of a carbon-containing material, a silicon-containing material, and a metal-containing material. In addition, the deposition gas contains unsaturated halon. The unsaturated halon is an unsaturated compound which has a fluorine atom, a bromine atom, and a carbon atom in a molecule and has 2 or 3 carbon atoms. Further, a power density of the bias power applied to the electrode is more than 0 W/cm2 and 0.5 W/cm2 or less.
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/26 | ....用波或粒子辐射轰击的 |
| ----------------H01L21/31 | .....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的；以及这些层的后处理；这些层的材料的选择 |