发明公开
EP4439679A1 OXIDE SEMICONDUCTOR, MANUFACTURING METHOD THEREFOR, AND SEMICONDUCTOR DEVICE COMPRISING SAME
审中-实审
基本信息:
- 专利标题： OXIDE SEMICONDUCTOR, MANUFACTURING METHOD THEREFOR, AND SEMICONDUCTOR DEVICE COMPRISING SAME
- 申请号：EP22899107.1 申请日：2022-11-25
- 公开(公告)号：EP4439679A1 公开(公告)日：2024-10-02
- 发明人： HEO, Soo Won , YOON, Young Joon , CHO, Sung Beom , PARK, In Pyo , KIM, Hyeon Woo , PARK, Jin Seong , KIM, Hye Mi , JUNG, Hyunsung , HWANG, Bukyeong
- 申请人： Korea Institute of Ceramic Engineering and Technology , IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
- 申请人地址： KR Jinju-si, Gyeongsangnam-do 52851 101 Soho-ro
- 专利权人： Korea Institute of Ceramic Engineering and Technology,IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
- 当前专利权人： Korea Institute of Ceramic Engineering and Technology,IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
- 当前专利权人地址： KR Jinju-si, Gyeongsangnam-do 52851 101 Soho-ro
- 代理机构： Dehns
- 优先权： KR 210166178 2021.11.26
- 国际申请： KR2022018899 2022.11.25
- 国际公布： WO2023096425 2023.06.01
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L21/02
摘要：
An Al-Sb-O-based oxide semiconductor containing aluminum (Al) and antimony (Sb) has excellent electrical conductivity and band gap, such that the semiconductor can be applied to thin film transistors and the like.
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L29/00 | 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件 |
| --------H01L29/02 | .按其半导体本体的特征区分的 |
| ----------H01L29/68 | ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的 |
| ------------H01L29/70 | ...双极器件 |
| --------------H01L29/762 | ....电荷转移器件 |
| ----------------H01L29/78 | .....由绝缘栅产生场效应的 |
| ------------------H01L29/786 | ......薄膜晶体管 |