基本信息:
- 专利标题： INTEGRATED HIGH VOLTAGE CAPACITOR
- 申请号：EP24172898.9 申请日：2019-04-10
- 公开(公告)号：EP4404254A3 公开(公告)日：2024-09-04
- 发明人： AINSWORTH, Christopher David
- 申请人： Semtech Corporation
- 申请人地址： US Camarillo CA 93012-8790 200, Flynn Road
- 专利权人： Semtech Corporation
- 当前专利权人： Semtech Corporation
- 当前专利权人地址： US Camarillo CA 93012-8790 200, Flynn Road
- 代理机构： Grünecker Patent- und Rechtsanwälte PartG mbB
- 优先权： US 1862658073P 2018.04.16
- 分案原申请号： 19168319.2 2019.04.10
- 主分类号： H01L25/16
- IPC分类号： H01L25/16 ; H01L23/522 ; H01L23/045 ; H01L23/49
摘要：
A semiconductor device comprises a semiconductor die and an integrated capacitor formed over the semiconductor die. The integrated capacitor is configured to receive a high voltage signal. A transimpedance amplifier is formed in the semiconductor die. An avalanche photodiode is disposed over or adjacent to the semiconductor die. The integrated capacitor is coupled between the avalanche photodiode and a ground node. A resistor is coupled between a high voltage input and the avalanche photodiode. The resistor is an integrated passive device (IPD) formed over the semiconductor die. A first terminal of the integrated capacitor is coupled to a ground voltage node. A second terminal of the integrated capacitor is coupled to a voltage greater than 20 volts. The integrated capacitor comprises a plurality of interdigitated fingers in one embodiment. In another embodiment, the integrated capacitor comprises a plurality of vertically aligned plates.
公开/授权文献:
- EP4404254A2 INTEGRATED HIGH VOLTAGE CAPACITOR 公开/授权日：2024-07-24
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L25/00 | 由多个单个半导体或其他固态器件组成的组装件 |
| --------H01L25/16 | .包含在H01L27/00至H01L51/00各组中两个或多个不同大组内的类型的器件，例如构成混合电路的 |