基本信息:
- 专利标题： THREE-DIMENSIONAL MEMORY DEVICE WITH EMBEDDED DYNAMIC RANDOM-ACCESS MEMORY
- 申请号：EP24176697.1 申请日：2019-04-30
- 公开(公告)号：EP4401127A2 公开(公告)日：2024-07-17
- 发明人： LIU, Jun
- 申请人： Yangtze Memory Technologies Co., Ltd.
- 申请人地址： CN Wuhan, Hubei 430000 No.88 Weilai 3rd Road East Lake High-tech Development Zone
- 专利权人： Yangtze Memory Technologies Co., Ltd.
- 当前专利权人： Yangtze Memory Technologies Co., Ltd.
- 当前专利权人地址： CN Wuhan, Hubei 430000 No.88 Weilai 3rd Road East Lake High-tech Development Zone
- 代理机构： Lippert Stachow Patentanwälte Rechtsanwälte
- 分案原申请号： 19927324.4 2019.04.30
- 主分类号： H01L23/31
- IPC分类号： H01L23/31
摘要：
Embodiments of three-dimensional (3D) memory devices with embedded dynamic random-access memory (DRAM) and methods for forming the 3D memory devices are disclosed. In an example, a 3D memory device includes a first semiconductor structure including a peripheral circuit, an array of embedded DRAM cells, and a first bonding layer including a plurality of first bonding contacts. The 3D memory device also further includes a second semiconductor structure including an array of 3D NAND memory strings and a second bonding layer including a plurality of second bonding contacts. The 3D memory device further includes a bonding interface between the first bonding layer and the second bonding layer. The first bonding contacts are in contact with the second bonding contacts at the bonding interface.
公开/授权文献:
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L23/00 | 半导体或其他固态器件的零部件 |
| --------H01L23/02 | .容器；封接 |
| ----------H01L23/31 | ..按配置特点进行区分的 |