基本信息:
- 专利标题： SEMICONDUCTOR DEVICE
- 申请号：EP23743247.1 申请日：2023-01-17
- 公开(公告)号：EP4350777A1 公开(公告)日：2024-04-10
- 发明人： SAKURAI, Yosuke , NOGUCHI, Seiji , YOSHIDA, Kosuke , HAMASAKI, Ryutaro , YAMADA, Takuya
- 申请人： Fuji Electric Co., Ltd.
- 申请人地址： JP Kawasaki-shi, Kanagawa 210-9530 1-1, Tanabeshinden, Kawasaki-ku,
- 代理机构： MERH-IP Matias Erny Reichl Hoffmann Patentanwälte PartG mbB
- 优先权： JP2022006926 20220120
- 国际公布： WO2023140253 20230727
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/265 ; H01L21/76 ; H01L21/8234 ; H01L27/06 ; H01L29/739 ; H01L29/861 ; H01L29/868
摘要：
Provided is a semiconductor device comprising: a plurality of trench portions that are provided from an upper surface of the semiconductor substrate to below a base region, and include a gate trench portion and a dummy trench portion; a second conductivity type first lower end region that is provided to be in contact with lower ends of two or more trench portions which include the gate trench portion; a second conductivity type well region that is arranged in a different location from the first lower end region in a top view, provided from the upper surface of the semiconductor substrate to below the base region, and has a doping concentration higher than that of the base region; and a second conductivity type second lower end region that is provided between the first lower end region and the well region in a top view being separated from the first lower end region and the well region, and provided to be in contact with lower ends of one or more trench portions including the gate trench portion.
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L29/00 | 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件 |
| --------H01L29/02 | .按其半导体本体的特征区分的 |
| ----------H01L29/68 | ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的 |
| ------------H01L29/70 | ...双极器件 |
| --------------H01L29/762 | ....电荷转移器件 |
| ----------------H01L29/78 | .....由绝缘栅产生场效应的 |