基本信息:
- 专利标题： NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME
- 申请号：EP23157812.1 申请日：2023-02-21
- 公开(公告)号：EP4325502A1 公开(公告)日：2024-02-21
- 发明人： KIM, Yumin , KANG, Jooheon , KIM, Sunho , KIM, Seyun , GARAM, Park , SONG, Hyunjae , AHN, Dongho , YANG, Seungyeul , WOO, Myunghun , LEE, Jinwoo
- 申请人： Samsung Electronics Co., Ltd.
- 申请人地址： KR Suwon-si, Gyeonggi-do 16677 129, Samsung-ro Yeongtong-gu
- 代理机构： Elkington and Fife LLP
- 优先权： KR20220102228 20220816
- 主分类号： G11C13/00
- IPC分类号： G11C13/00 ; H10B63/00
摘要：
Provided are a nonvolatile memory device and an operating method thereof. The nonvolatile memory device may include a conductive pillar, a resistance change layer surrounding a side surface of the conductive pillar, a semiconductor layer surrounding a side surface of the resistance change layer, a gate insulating layer surrounding a side surface of the semiconductor layer, and a plurality of insulating patterns and a plurality of gate electrodes alternately arranged along a surface of the gate insulating layer. The plurality of insulating patterns and the plurality of gate electrodes may surround a side surface of the gate insulating layer.