
基本信息:
- 专利标题: SOLAR CELL AND METHOD FOR MANUFACTURING SOLAR CELL
- 申请号:EP23204282.0 申请日:2010-05-24
- 公开(公告)号:EP4287272A3 公开(公告)日:2024-01-17
- 发明人: HASHIGAMI, Hiroshi , WATABE, Takenori , OTSUKA, Hiroyuki
- 申请人: SHIN-ETSU CHEMICAL CO., LTD.
- 申请人地址: JP Tokyo 100-0004 6-1, Ohtemachi 2-chome Chiyoda-ku
- 代理机构: Mewburn Ellis LLP
- 优先权: JP2009217382 20090918
- 主分类号: H01L31/068
- IPC分类号: H01L31/068 ; H01L31/0216 ; H01L31/0224
摘要:
Disclosed is a solar cell which is provided with: a semiconductor substrate having a light-receiving surface and a non-light-receiving surface; a PN junction section formed on the semiconductor substrate; a passivation layer formed on the light-receiving surface and/or the non-light-receiving surface; and power extraction electrodes formed on the light-receiving surface and the non-light-receiving surface. The solar cell is characterized in that the passivation layer includes an aluminum oxide film having a thickness off 40 nm or less. As a result of forming an aluminum oxide film having a predetermined thickness on the surface of the substrate, it is possible to achieve excellent passivation performance and excellent electrical contact between silicon and the electrode by merely firing the conductive paste, which is conventional technology. Furthermore, an annealing step, which has been necessary to achieve the passivation effects of the aluminum oxide film in the past, can be eliminated, thus dramatically reducing costs.
公开/授权文献:
- EP4287272A8 SOLAR CELL AND METHOD FOR MANUFACTURING SOLAR CELL 公开/授权日:2024-02-21
IPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L31/00 | 对红外辐射、光、较短波长的电磁辐射,或微粒辐射敏感的,并且专门适用于把这样的辐射能转换为电能的,或者专门适用于通过这样的辐射进行电能控制的半导体器件;专门适用于制造或处理这些半导体器件或其部件的方法或设备;其零部件 |
--------H01L31/02 | .零部件 |
----------H01L31/042 | ..包括光电池板或阵列,如太阳电池板或阵列 |
------------H01L31/068 | ...只是PN单质结型势垒的 |