发明公开
EP4243082A3 CONTACT OVER ACTIVE GATE STRUCTURES WITH UNIFORM AND CONFORMAL GATE INSULATING CAP LAYERS FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
审中-实审
基本信息:
- 专利标题： CONTACT OVER ACTIVE GATE STRUCTURES WITH UNIFORM AND CONFORMAL GATE INSULATING CAP LAYERS FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
- 申请号：EP23152941.3 申请日：2023-01-23
- 公开(公告)号：EP4243082A3 公开(公告)日：2024-01-03
- 发明人： GULER, Leonard P. , MUNASINGHE, Chanaka D. , WALLACE, Charles H. , GHANI, Tahir , GANESAN, Krishna
- 申请人： INTEL Corporation
- 申请人地址： US Santa Clara, CA 95054 2200 Mission College Blvd.
- 代理机构： 2SPL Patentanwälte PartG mbB
- 优先权： US202217693124 20220311
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/78
摘要：
Contact over active gate (COAG) structures with uniform and conformal gate insulating cap layers, and methods of fabricating contact over active gate (COAG) structures using uniform and conformal gate insulating cap layers, are described. In an example, an integrated circuit structure includes a gate structure. An epitaxial source or drain structure is laterally spaced apart from the gate structure. A dielectric spacer is laterally between the gate structure and the epitaxial source or drain structure, the dielectric spacer having an uppermost surface below an uppermost surface of the gate structure. A gate insulating cap layer is on the uppermost surface of the gate structure and along upper portions of sides of the gate structure, the gate insulating cap layer distinct from the dielectric spacer.